Untitled
Abstract: No abstract text available
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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IRG4PH40UD2-EP
Abstract: 035H IRGP30B120KD-E
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
IRG4PH40UD2-EP
035H
IRGP30B120KD-E
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induction cooking
Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
induction cooking
035H
IRG4PH40UD2-EP
IRGP30B120KD-E
TO247AD package
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mosfet 10a 600v
Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
mosfet 10a 600v
D-12
IRGBC20S
rectifier IGBT
IRGBC20S IGBT
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D-12
Abstract: IRGBC20S IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
D-12
IRGBC20S
IRGBC20S IGBT
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D-12
Abstract: IRGBC20S
Text: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.
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IRGBC20S
O-220AB
D-12
IRGBC20S
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Untitled
Abstract: No abstract text available
Text: APPLIED POWER SYSTEMS, INC. IAP1000D170H - SixPac 1000A / 1700V Half-Bridge IGBT Inverter IAP1000D170H - Half-Bridge SixPac™ IGBT Integrated Assembly Air Cooled Liquid Cooled Features: Description: The SixPacTM from Applied Power Systems is a configurable IGBT based power stage that is
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IAP1000D170H
IAP1000D170
IAP1000D170s
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2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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igbt based inverter
Abstract: igbt inverter reference schematics inverter, water cooling system IGBT 250 amp half bridge inverter schematic simple inverter schematic circuit IGBT ac switch circuit Schematic of 3phase capacitor bank simple 3 phase INVERTER schematic 3 phase igbt INVERTER ac motor
Text: APPLIED POWER SYSTEMS, INC. IAP900D120H - SixPac 900A / 1200V Half-Bridge IGBT Inverter IAP900D120H - Half-Bridge SixPac™ IGBT Integrated Assembly IAPL900D120H IAP900D120H Air Cooled Liquid Cooled Description: The SixPacTM from Applied Power Systems is
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IAP900D120H
IAPL900D120H
IAP900D120H
IAP900D120
IAPL900D120H
IAP900D120s
IAPL900D120s
igbt based inverter
igbt inverter reference schematics
inverter, water cooling system
IGBT 250 amp
half bridge inverter schematic
simple inverter schematic circuit
IGBT ac switch circuit
Schematic of 3phase capacitor bank
simple 3 phase INVERTER schematic
3 phase igbt INVERTER ac motor
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Untitled
Abstract: No abstract text available
Text: APPLIED POWER SYSTEMS, INC. IAP900D120H - SixPac 900A / 1200V Half-Bridge IGBT Inverter IAP900D120H - Half-Bridge SixPac™ IGBT Integrated Assembly IAPL900D120H IAP900D120H Air Cooled Liquid Cooled Description: The SixPacTM from Applied Power Systems is
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IAP900D120H
IAPL900D120H
IAP900D120H
IAP900D120
IAPL900D120H
IAP900D120s
IAPL900D120s
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Super-247 Package
Abstract: IRG4PSC71UD
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
Super-247 Package
IRG4PSC71UD
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Untitled
Abstract: No abstract text available
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
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diode lt 247
Abstract: IRG4PSC71UD TB diode 1084 GE
Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
diode lt 247
IRG4PSC71UD
TB diode
1084 GE
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IRF 810
Abstract: IRG4BC30S-S
Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency
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IRG4BC30S-S
EIA-418.
IRF 810
IRG4BC30S-S
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IRG4BC20S
Abstract: IRG4BC20
Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1597A
IRG4BC20S
O-220AB
O-220AB
IRG4BC20S
IRG4BC20
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IRG4PC30S
Abstract: No abstract text available
Text: PD - 91586A IRG4PC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1586A
IRG4PC30S
O-247AC
O-247AC
IRG4PC30S
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Untitled
Abstract: No abstract text available
Text: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5170A
IRG4BC30SPbF
O-220AB
O-220AB
4BC30SPbF
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Irg4bc40spbf
Abstract: No abstract text available
Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5175A
IRG4BC40SPbF
O-220AB
O-220AB
4BC40SPbF
Irg4bc40spbf
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC30S
O-247AC
O-247AC
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IRG4PC40S
Abstract: No abstract text available
Text: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC40S
O-247AC
O-247AC
IRG4PC40S
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Untitled
Abstract: No abstract text available
Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC30S
O-22QAB
S54S2
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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OCR Scan
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IRG4BC40S
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 9.1581 International I R Rectifier IRG4PC50S PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized tor minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC50S
O-247AC
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