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    HY5117800 Search Results

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    HY5117800 Price and Stock

    SK Hynix Inc HY5117800BT-60A

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    Bristol Electronics HY5117800BT-60A 3,000
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    SK Hynix Inc HY5117800BT-60

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    Bristol Electronics HY5117800BT-60 520
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    HY5117800 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5117800C Hyundai 2Mx8, Fast Page mode Original PDF

    HY5117800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5117800C

    Abstract: No abstract text available
    Text: HY5117800C,HY5116800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117800C HY5116800C

    HY5117800C

    Abstract: No abstract text available
    Text: HY5117800C,HY5116800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117800C HY5116800C 10/Sep

    TT Electronics

    Abstract: No abstract text available
    Text: HY5117800C,HY5116800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117800C HY5116800C TT Electronics

    HY5117800B

    Abstract: HY5117800BT
    Text: HY5117800B,HY5116800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117800B HY5116800B HY5117800BT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM53221OA 32-bit HYM53221 HY5117800B HYM53221OAE/ASLE/ATE/ASLTE 4b750Afl 1CE13-10-DEC94 HYM532210A

    Untitled

    Abstract: No abstract text available
    Text: "H YU NDA I HYM532220A E-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HVM532220A is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72pin glass-epoxy printed circuit board. 0.22 iFdecoupling


    OCR Scan     		PDF HYM532220A 32-bit HVM532220A HY5117800B 72pin HYM532220AE/ASLE/ATE/ASLTE HYM532220AEG/ASLEG/ATEG/ASLTEG DQ0-DQ31) 1CE13-10-DEC

    HYUNDAI i10

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Page m ode CMOS DRAM m odule consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for


    OCR Scan     		PDF HYM532210A 32-bit HYM53221OA HY5117800B HYM53221OAE/ASLE/ATE/ASLTE HYM53221OAEG/ASLEG/ATEG/ASLTEG DQ0-DQ31) 1CE13-10-DEC94 HYUNDAI i10

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Rage mode CMOS ORAM module consisting of four HY5117800B In 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM532210A 32-bit HYM53221OA HY5117800B HYM53221OAE/ASLE/ATE/ASLTE HYMS3221OAEG/ASLEG/ATEG/ASLTEG DQ0-DQ31)

    Untitled

    Abstract: No abstract text available
    Text: HY5117800 Series «HYUNDAI 2Mx 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117800 1AD08-10-MAY94 HY5117800JC HY5117800SLJC HY5117800TC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY5117800B,HY5116800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode C M O S D RAM s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117800B HY5116800B

    Untitled

    Abstract: No abstract text available
    Text: "H YU N D AI HY5117800B, HY5116800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.


    OCR Scan     		PDF HY5117800B, HY5116800B HY5117800BJ HY5117800BSLJ HY5117800BT HY5117800BSLT HY5116800BJ HY5116800BSLJ HY5116800BT HY5116800BSLT

    Untitled

    Abstract: No abstract text available
    Text: ‘ HYUNDAI HYM532220A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast Page mode CMOS ORAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin giass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM532220A 32-bit HY5117800B 22nFdecoupling HYM532220AE/ASLE/ATE/ASLTE HYM532220AEG/ASLEG/ATEG/ASLTEG l25f3 17lMIN.

    Untitled

    Abstract: No abstract text available
    Text: HY5117800 Series »HYUNDAI 2M X 8-bit CMOS ORAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117800 HY5117800 1AD08-10-MAY94 00031bà HY5117800JC HY5117800SLJC HY5117800TC

    Untitled

    Abstract: No abstract text available
    Text: • ‘H Y U N D A I * HY5117800C,HY5116800C > 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynam ic RAM organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P age m ode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. T h e circuit and process design allow this


    OCR Scan     		PDF HY5117800C HY5116800C

    cs40

    Abstract: JT23
    Text: HY5117800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117800 1ad08-10-m 4b75Dà D0031bà HY5117800JC HY5117800SLJC cs40 JT23

    HYM532814

    Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
    Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2


    OCR Scan     		PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC

    HY5117800BT

    Abstract: No abstract text available
    Text: - K Y U H O A I HY5117804B,HY5116804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117804B HY5116804B A0-A11) HY5117800BT

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


    OCR Scan     		PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    HY5118160JC

    Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
    Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM


    OCR Scan     		PDF HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W

    HY5118160

    Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
    Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF 256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


    OCR Scan     		PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616