Untitled
Abstract: No abstract text available
Text: HYM5V64414B N-Series Buffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V64414B N-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168
|
Original
|
HYM5V64414B
4Mx64
4Mx64-bit
HY51V17404B
16-bit
HYM5V64414BNG/BTNG
168-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM5V72A414B K-Series Unbuffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V72A414B K-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy
|
Original
|
HYM5V72A414B
4Mx72
4Mx72-bit
HY51V17404B
HYM5V72A414BKG/BTKG
168-Pin
|
PDF
|
HY51V17404B
Abstract: 4mx4
Text: HY51V17404B,HY51V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
Original
|
HY51V17404B
HY51V16404B
4mx4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM5V72A414B N-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V72A414B N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168
|
Original
|
HYM5V72A414B
4Mx72
4Mx72-bit
HY51V17404B
16-bit
HYM5V72A414BNG/BTNG
168-Pin
|
PDF
|
HY51V17404
Abstract: HYM5V64414B
Text: HYM5V64414B K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy
|
Original
|
HYM5V64414B
4Mx64
4Mx64-bit
HY51V17404B
HYM5V64414BKG/BTKG
168-Pin
HY51V17404
|
PDF
|
mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
|
Original
|
CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
|
PDF
|
gi115
Abstract: No abstract text available
Text: -«YUNDWI — • H Y M 5 V 6 4 4 1 4 B K - S e r ie s Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM 5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy
|
OCR Scan
|
4Mx64
5V64414B
4Mx64-bit
HY51V17404B
HYM5V64414BKG/BTKG
168-Pin
256OOK
64414B
j4-/-noc44
gi115
|
PDF
|
hyundai hy 214
Abstract: UL-96 SH17 wl33
Text: • HYUNDAI HY51V17404B, HY51V16404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data Out mode
|
OCR Scan
|
HY51V17404B,
HY51V16404B
HY51V17404BJ
HY51V17404BSLJ
HY51V17404BT
HY51V17404BSLT
HY51V16404BJ
HY51V16404BSLJ
HY51V16404BT
HY51V16404BSLT
hyundai hy 214
UL-96
SH17
wl33
|
PDF
|
DG37
Abstract: No abstract text available
Text: -H Y U N D A I ^ - J • HYM5V72A414A K-Series 4Mx72-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ orTSOPII and one 2048 bit EEPROM on a 168 pin glass-epoxy printed
|
OCR Scan
|
HYM5V72A414A
4Mx72-bit
72-bit
HY51V17404B
HYM5V72A414AKG/ATKG/ASLKG/ASLTKG
225i5
72jMiK
4Mx72-btt
HYM5V72A414AKG
DG37
|
PDF
|
HY51V17404B
Abstract: No abstract text available
Text: “H Y U N D A I HY51V17404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V17404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
HY51V17404B
HY51V17404B
1AD52-10-MAY95
HY51V17404BJ
HY51V17404BSLT
HY51V17404BT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
OCR Scan
|
HY51V17404B
V16404B
A0-A11)
|
PDF
|
HY5118164B
Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B
|
OCR Scan
|
16Mbit
HY51V17404A
HY51V17404B
300mil)
400mil)
HY5118164B
hy5118160b
HY5118160
HY51V65400TC
HY5117804B
|
PDF
|
WAOQ
Abstract: HY51V174 HY51V17404BJ
Text: HY51V17404B Series •HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 V 1 7 4 0 4 B is the n ew g e n e ra tio n a nd fa s t d y n a m ic R A M org a n ize d 4 ,1 9 4 ,3 0 4 x 4-bit. T h e H Y 5 1 V 1 7 4 0 4 B utiliz e s H y u n d a i's C M O S s ilicon g a te p ro ce ss te c h n o lo g y as w e ll a s a d va n ce d circu it te c h n iq u e s to p rovide w ide
|
OCR Scan
|
HY51V17404B
D52-10-M
HY51V17404BJ
HY51V17404BSLT
HY51V174
HY51V17404BR
HY51V17404BSLR
1AD52-10-M
WAOQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
OCR Scan
|
|
PDF
|
|
VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
|
OCR Scan
|
256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
|
PDF
|
BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
|
OCR Scan
|
HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
|
PDF
|
AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
|
OCR Scan
|
HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
|
PDF
|
HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
|
OCR Scan
|
256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
|
PDF
|
HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
|
OCR Scan
|
HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
|
PDF
|