HYM591000B
Abstract: No abstract text available
Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is
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HYM591000B
HY514400A
HY531000A
HYM591000BM/BLM
BB06-00-M
1BB06-00-M
1BB06-00-MAY93
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM591000B M-Series 1M x9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is
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OCR Scan
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HYM591000B
HY514400A
HY531000A
22/uF
HYM591000BM/BLM
HYM591610M/LM
031MIN.
HYM591610TM/LTM
08ffi
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM591000B Seríes 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is
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OCR Scan
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PDF
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HYM591000B
HY514400A
HY531000A
HYM591000BM/BLM
BB06-00-M
1-274/-0-0ai
29MAX.
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