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    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU

    HY51V16100

    Abstract: No abstract text available
    Text: .M V II NO ft I HY51V16100A 16M DESCRIPTION X 1-bit CMOS DRAM ORDERING INFORMATION T his fam ily is a 16M bit dynam ic RAM organized 16 777,216 x 1-bit configuration with Fast Page m ode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the


    OCR Scan     		PDF HY51V16100A HY51V16100AJ HY51V1610racteristics HY51V16100

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A HY51V16100A V16100Ato 1AD21-0O-MAY94 HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V161OOASLT HY51V16100AR

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100A Series •HYUNDAI 16Mx 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100A 1AD21-00-MAY9S HY51V161OOA HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V16100ASLT

    Untitled

    Abstract: No abstract text available
    Text: H YU N D A I HY51V16100A Series 16M X 1-blt CMOS ORAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A Vl6100Ato 1AD21-00-MAY94 HY51V16100AJ HY51V161OOASLJ HY51V16100AT HY51V161OOASLT

    A11t

    Abstract: LTC 5650
    Text: HY51V16100B Series - HYUNDAI 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100B 12T/BSC 1AD43-00-MAY95 HY51V16100BJ HY51V16100BSLJ HY51V16100BT A11t LTC 5650

    19N80

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 V 1 6 1 0 0 A S e r ie s 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100A 127BSC 1AD21-00-MAY95 HY51V16100AJ 6100A HY51V16100AT HY51V16100ASLT 19N80

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		PDF HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY5118160

    Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
    Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF 256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ