"gate array" hitachi
Abstract: L1521 L1323 HD6301 1105TG 8403R hitachi ic
Text: SELECTIO N GUIDES FOR APPLICATIONS 1. T ELEC O M NET W O R K SY ST E M ^ H IT A C H I Hitachi America, Ltd. • Hitachi Plaza • 2000 Sierra Point Pkwy. • Brisbane, CA 94005-1819 • 415 589-8300 SELECTION GUIDES FOR APPLICATIONS 2. FOR P A B X (Private Auto Branch Exchange) A P P LIC A T IO N
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JHA16811ANT/AM
16817N
8202T
1103T
1104TG
1105TG
1321D
L1323T
L1521A
HL1561
"gate array" hitachi
L1521
L1323
HD6301
1105TG
8403R
hitachi ic
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS S1E t • IMIbSOS QD1171D Mb? BiHITM HE1301R- T-4 T-J3 Infrared Em itting D iod es (IRED) Description HE1301R is a 1.3 /¿m InGaAsP infrared emit ting diode with double heterojunction structure, which provides high speçd response.
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QD1171D
HE1301R--------------
HE1301R
HE1301R
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HE8807SG
Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.
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Q012DE7
HL7831G/HG
HL7831G/HG
HL7831HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7831G
HL7831HG
HL8312E
Hitachi Scans-001
HE8403
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Untitled
Abstract: No abstract text available
Text: 5HE D HITACHI / OPTOELECTRONICS HHIbSD-S DG121ÔS flbM « H I T M • H E 1 301 S U /M L/1 K InGaAsP IRED T The HE1301SG/M L/TR are 1.3 (J.m band infrared light emitting diodes for use as the light sources in opti cal fiber communications. They provide a high speed response due to their double heterojunction InGaAsP structure.
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DG121Ã
HE1301SG/M
01jtical
HE1301SG/ML/TR
HE1301ML)
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HE8811
Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit able as a light source for laser beam printers, laser levelers and various other types of optical equipment.
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HL7842MG
HL7842MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8811
HE8403
HE8807SG
HE8812SG
HE8813VG
HL8312E
he8813
Hitachi Scans-001
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HL1221A
Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.
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HL1221
HL1221A/AC
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL1221A
HL1221AC
HL8312E
Hitachi Scans-001
HE8403
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HL7802E
Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
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HL7802E/G
HL7802E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7802E
HE8807SG
HE8813VG
HL7802G
HL8312E
Hitachi Scans-001
he8813
HE8403
T9040
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T9040
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are
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HL8318E/G
441bEG5
HL8318E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
T9040
HE8807SG
HE8813VG
HL8312E
HL8318E
HL8318G
Hitachi Scans-001
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hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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HL7838G
D0120L42
HL7838G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
hitachi he1301
HL8312E
laser GaAIAs de 5 mw 760 800
HE8807SG
HE8813VG
HL7838
Hitachi Scans-001
HE8403
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
DD121S3
HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HE8815VG
HE8813VG
HE8815VG
hitachi sr 302
te 1819
HL1561A
HL1561AC
10 gb laser diode
Hitachi Scans-001
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HE1301
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are
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HL8319E/G
001EGÃ
HL8319E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE1301
HE8807SG
HE8813VG
HL8312E
HL8319E
HL8319G
Hitachi Scans-001
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HE8813VG
Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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HL8312E/G
HL8312E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8813VG
HE8403
HE8807SG
HE8811
HL8312E
HL8312G
HE84-03
Hitachi Scans-001
HE8807
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HL8312E
Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope
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HL7841MG
G012047
HL7841MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HL8312E
44FC
I00C
HE8807SG
HE8811
HE8812SG
HE8813VG
HE7601
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HL8314E
Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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HL8314E/G
0G12a71
HL8314E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HL8314E
XP 215 hitachi
HE130
hitachi he1301
HL8314G
HE8807SG
HL8312E
Hitachi Scans-001
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Thermistor bth 471
Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier
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D01S14S
HL1541A/AC/FG/BF/DL/DM
D012140
HL1541
HL1541A/AC
HL1541FG
HL1541BF
HL1541DL
HE8815VG
HE8813VG
Thermistor bth 471
d 1548
10G 1550 optical laser in butterfly
HL1541A
HL1541DM
10 gb laser diode
AP-93
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tic 1260
Abstract: he1301sg
Text: HE1301SG-Infrared Emitting Diodes IRED Description H E 1 3 0 1 S G is a 1.3 ¿ tm In G a A s P in fr a r e d e m it tin g d io d e w ith d o u b le h e te ro ju n c tio n s tr u c tu r e , w h ic h p ro v id e s h ig h s p e e d re s p o n se . H ig h c o u p lin g efficiency can b e re a liz e d u s in g a
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HE1301SG-----Infrared
HE1301SG
tic 1260
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HE1301ML
Abstract: No abstract text available
Text: HE1301ML Infrared Emitting Diodes IRED Description H E 1301M L is a 1.3 /¿m In G aA sP infrared e m it ting d io d e w ith do u b le h etero ju n ctio n stru c tu re , w hich pro v id es high speed response. Optica) o u tp u t from the chip is directed to the
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HE1301ML
HE1301ML
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hitachi he1301
Abstract: 0660H HE1301
Text: HE1301 TR-Infrared Emitting Diodes IRED Description H E 1301T R is a 1.3 /im In G aA sP infrared e m it ting d iode with do u b le hetero ju n ctio n stru ctu re, w hich provides high speed response. T h e package with a receptacle is easily connected
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HE1301
1301T
HE1301TR
hitachi he1301
0660H
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HE1301R
Abstract: No abstract text available
Text: HE1301R-Infrared Emitting Diodes IRED Description II H E 1301R is a 1.3 jum In G aA sP infrared em it ting d io d e w ith d o u b le h etero ju n ctio n stru ctu re, w hich provides high speed response. It is su itab le as a light source in high-speed
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HE1301R-------Infrared
1301R
HE1301R
HE1301R
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HE8807SG
Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
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HL7832G/HG
G012D32
HL7832G/HG
HL7832HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7832G
HL7832HG
HL8312E
he8813vg
Hitachi Scans-001
LRTBGVTG-U9V5-1 A7A9-5 TT7-6
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0G12135
HL1521A/AC/FG
HL1521A/AC/FG
HL1521FG)
HL1521FG
HL1521FG
HL1521
HE8815VG
HE8813VG
11w cfl circuit
HE8807SG
HL1521A
HL1521AC
HL8312E
LTH 1550 01
Hitachi Scans-001
44BA
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HL7836MG
Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
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HL7836G/MG
HL7836G/MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7836MG
HE8807SG
HL7836G
HL8312E
Hitachi Scans-001
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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