Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HE8813 Search Results

    HE8813 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OPR 12 PHOTOCELL

    Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
    Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In


    Original     		PDF ADE-408-001E HR1201CX OPR 12 PHOTOCELL photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed

    Untitled

    Abstract: No abstract text available
    Text: HE8813VG GaAIAs IRED Description The HE8813VG is a 880 nm band GaAIAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for still camera autofocus mechanisms. Features Package Type HE8813VG: VG • High efficiency and high power output


    OCR Scan     		PDF HE8813VG HE8813VG HE8813VG: ib205 GG1442fi

    he8813vg

    Abstract: he8813
    Text: HE8813VG-GaAIAs Infrared Emitting Diode Description The HE8813VG is a GaAIAs double heterojunction structure 0.8 p.m band light emitting diode. It is suitable for use as the light source in still camera autofocus mechanisms. Features • High efficiency and high power output


    OCR Scan     		PDF HE8813VG---GaAIAs HE8813VG HE8813VG: HE8813VG he8813

    Untitled

    Abstract: No abstract text available
    Text: HE8813VG Description GaAIAs IRED The HE8813VG is a 880 nm band G aA lA s infrared light em itting diode w ith a double heterojunction struc­ ture. It is suitable as a light source fo r still camera autofocus mechanisms. Features Package Type • HE8813VG: VG


    OCR Scan     		PDF HE8813VG HE8813VG: HE8813VG

    HE8807SG

    Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
    Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­


    OCR Scan     		PDF HL7832G/HG G012D32 HL7832G/HG HL7832HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6

    HE1301

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are


    OCR Scan     		PDF HL8319E/G 001EGÃ HL8319E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE1301 HE8807SG HE8813VG HL8312E HL8319E HL8319G Hitachi Scans-001

    HL7806

    Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
    Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G


    OCR Scan     		PDF HL6314M HL6316G HL6411G* HL6315G HL6312G 6313G HL6720G HL6724M HL6712G HL6722G HL7806 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851

    Untitled

    Abstract: No abstract text available
    Text: Section 6 Reliability T h is section c o v e rs p o in ts w h ich p articularly affect cu rrent, etc. to drift, an d u ltim a tely lead to the en d th e o p e ra tin g life lig h t e m ittin g d e v ic e s , an d of p ro v id e s so m e e x a m p l e s w h ich sh o u ld be studied


    OCR Scan     		PDF HE8813VG HE8811, HE8812SG, HE8404SG, HE7601SG HE8807

    L6312G

    Abstract: 8325G HL6314M L6313
    Text: Contents Product Lineup . Part Num bers.


    OCR Scan     		PDF HR1103CX. HR1104CX. HR1107CR. HR1201CX. L6312G 8325G HL6314M L6313

    HE8811

    Abstract: No abstract text available
    Text: Section 2 Chip Structures 2.1 Laser Diodes Structures 2.1.1 G aA lA s LD Structure T h e p - ty p e a c tiv e la y e r , in w h i c h s t i m u l a t e d emission enforces optical amplification figure 2 - 1 (a , is processed first. The p-n junction is made


    OCR Scan     		PDF

    HE8815VG

    Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
    Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.


    OCR Scan     		PDF HL8311E/G HL8311E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M

    HL7836MG

    Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
    Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light


    OCR Scan     		PDF HL7836G/MG HL7836G/MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7836MG HE8807SG HL7836G HL8312E Hitachi Scans-001

    HE8811

    Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit­ able as a light source for laser beam printers, laser levelers and various other types of optical equipment.


    OCR Scan     		PDF HL7842MG HL7842MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8811 HE8403 HE8807SG HE8812SG HE8813VG HL8312E he8813 Hitachi Scans-001

    HE8813VG

    Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
    Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


    OCR Scan     		PDF HL8312E/G HL8312E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8813VG HE8403 HE8807SG HE8811 HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807

    11w cfl circuit

    Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
    Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm


    OCR Scan     		PDF 0G12135 HL1521A/AC/FG HL1521A/AC/FG HL1521FG) HL1521FG HL1521FG HL1521 HE8815VG HE8813VG 11w cfl circuit HE8807SG HL1521A HL1521AC HL8312E LTH 1550 01 Hitachi Scans-001 44BA

    hitachi he1301

    Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser


    OCR Scan     		PDF HL7838G D0120L42 HL7838G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, hitachi he1301 HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HL7838 Hitachi Scans-001 HE8403

    HL7806

    Abstract: HE8807CL HL7812G HE8811 HL7812 he130
    Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,


    OCR Scan     		PDF HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A HL1321AC, HL1322AC, HL1341AC, HL7806 HE8807CL HL7812G HE8811 HL7812 he130

    HL8314E

    Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


    OCR Scan     		PDF HL8314E/G 0G12a71 HL8314E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8314E XP 215 hitachi HE130 hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001

    Thermistor bth 471

    Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
    Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier


    OCR Scan     		PDF D01S14S HL1541A/AC/FG/BF/DL/DM D012140 HL1541 HL1541A/AC HL1541FG HL1541BF HL1541DL HE8815VG HE8813VG Thermistor bth 471 d 1548 10G 1550 optical laser in butterfly HL1541A HL1541DM 10 gb laser diode AP-93

    hitachi sr 302

    Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
    Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)


    OCR Scan     		PDF HL1561A/AC/BF DD121S3 HL1561A/AC/BF HL1561BF HL1561 HL1561BF) 561A/AC/BF) HE8815VG HE8813VG HE8815VG hitachi sr 302 te 1819 HL1561A HL1561AC 10 gb laser diode Hitachi Scans-001

    HL1221A

    Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.


    OCR Scan     		PDF HL1221 HL1221A/AC HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL1221A HL1221AC HL8312E Hitachi Scans-001 HE8403

    T9040

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are


    OCR Scan     		PDF HL8318E/G 441bEG5 HL8318E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, T9040 HE8807SG HE8813VG HL8312E HL8318E HL8318G Hitachi Scans-001

    HE8807CL

    Abstract: HL7851
    Text: Product Lineup-Visible and Infrared Laser Diodes t 10 : Under development Product Lineup Visible and Infrared Laser Diodes cont 1— Ì Wavelength Optical Output 785 nm 5 mW internal circuit L D ^ PD L°ypD Main application Part No. HL7836MG Laser beam


    OCR Scan     		PDF HL7836MG HL7843MG HL7859MGt HL7853MG HL7851G HL7852G HL8325G HR1103CX HR11Q4CX HR1107CR HE8807CL HL7851

    HL8312E

    Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
    Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope


    OCR Scan     		PDF HL7841MG G012047 HL7841MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8312E 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE7601