Untitled
Abstract: No abstract text available
Text: HITACHI/tOPTOELECTRONICS S4E T> m MMTbEQS DG121b7 ÛMT • HE8403SG/ML/TR_ GaAIAs IRED The HE8403SG/ML/TR are 0.8 nm band infrared light emitting diodes for use as the light sources in opti cal fiber communications. They provide a high speed response due to their double heterojunction GaAIAs structure.
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DG121b7
HE8403SG/ML/TR_
HE8403SG/ML/TR
HE8403SG/ML/TR
T-41-i;
HE8403ML)
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Untitled
Abstract: No abstract text available
Text: HE8403SG-Infrared Emitting Diodes IRED a D escription H E 8 4 0 3 S G is a 0 .8 /um G a A lA s in fra re d e m it tin g d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu r e , w h ic h p ro v id e s h ig h s p e e d re s p o n s e . H ig h c o u p lin g efficien cy c an b e re a liz e d u s in g a
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HE8403SG----Infrared
25onditions
HE8403SG
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Untitled
Abstract: No abstract text available
Text: HE8403TR Infrared Emitting Diodes IRED Description H E 8403T R is a 0.8 /xm G aA lA s infrared e m it tin g diode with double hetero ju n ctio n stru ctu re, w hich pro v id es high speed response. T h e package w ith a receptacle is easily connected w ith F C -type co n nector; suitable as a light source
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HE8403TR
HE8403TR
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Untitled
Abstract: No abstract text available
Text: HE8403R S1E » Infrared Emitting Diodes IRED • 4^205 OOllbñfl 1^0 ■ HITM HITACHI/(OPTOELECTRONICS) T-4I- Description H E 8403R is a 0.8 /xm G aA lA s infrared em itting diode with do u b le h eterojunction stru ctu re, which provides high speed response.
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HE8403R
8403R
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Untitled
Abstract: No abstract text available
Text: HE8403ML-Infrared Emitting Diodes IRED Description H E 8 4 0 JM L is a 0.8 f i m G aA IA s infrared e m it ting d iode w ith d o u b le h eterojunction stru ctu re, w hich provides high speed response. Optical o u tp u t from the chip is directed to the
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HE8403ML----Infrared
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HE8403ML
Abstract: No abstract text available
Text: HE8403SG/ML GaAIAs IRED Description The HE8403SG/M L are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance
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HE8403SG/ML
HE8403SG/M
HE8403SG:
HE8403ML:
HE8403ML)
HE8403ML
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Untitled
Abstract: No abstract text available
Text: HE8403R-Infrared Emitting Diodes IRED Description H E 8 4 0 3 R is a 0 .8 p m G a A IA s in fra re d e m ittin g d io d e w ith d o u b le h e te ro ju n c tio n s tr u c tu r e , w h ich p ro v id e s h ig h s p e e d re s p o n se . O ptical fib er c an b e c lo se to th e c h ip , a c h ie v in g
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HE8403R------Infrared
HE8403R
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Untitled
Abstract: No abstract text available
Text: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance
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HE8403SG/ML
HE8403SG/ML
HE8403SG:
HE8403ML:
HE8403ML)
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HE8807SG
Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
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HL7832G/HG
G012D32
HL7832G/HG
HL7832HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7832G
HL7832HG
HL8312E
he8813vg
Hitachi Scans-001
LRTBGVTG-U9V5-1 A7A9-5 TT7-6
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HE1301
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are
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HL8319E/G
001EGÃ
HL8319E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE1301
HE8807SG
HE8813VG
HL8312E
HL8319E
HL8319G
Hitachi Scans-001
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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HE8815VG
Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
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HL8311E/G
HL8311E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8807SG
HL8311E
HL8311G
HL8312E
Hitachi Scans-001
P015M
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HL7806
Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Text: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.
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HE8811
Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit able as a light source for laser beam printers, laser levelers and various other types of optical equipment.
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HL7842MG
HL7842MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8811
HE8403
HE8807SG
HE8812SG
HE8813VG
HL8312E
he8813
Hitachi Scans-001
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HE8813VG
Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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HL8312E/G
HL8312E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8813VG
HE8403
HE8807SG
HE8811
HL8312E
HL8312G
HE84-03
Hitachi Scans-001
HE8807
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HE8807SG
Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.
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Q012DE7
HL7831G/HG
HL7831G/HG
HL7831HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7831G
HL7831HG
HL8312E
Hitachi Scans-001
HE8403
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0G12135
HL1521A/AC/FG
HL1521A/AC/FG
HL1521FG)
HL1521FG
HL1521FG
HL1521
HE8815VG
HE8813VG
11w cfl circuit
HE8807SG
HL1521A
HL1521AC
HL8312E
LTH 1550 01
Hitachi Scans-001
44BA
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hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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HL7838G
D0120L42
HL7838G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
hitachi he1301
HL8312E
laser GaAIAs de 5 mw 760 800
HE8807SG
HE8813VG
HL7838
Hitachi Scans-001
HE8403
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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laser diode 780 nm
Abstract: HE8403ML
Text: Part Numbers 1. Hitachi optoelectronic device part numbers indicate the following: !-!□□□□□[]□ Package type Chip structure, characteristics Emitting wavelength Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type ' Laser diode: L Infreared emitting diode: E
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HE8403ML
laser diode 780 nm
HE8403ML
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HL8314E
Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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HL8314E/G
0G12a71
HL8314E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HL8314E
XP 215 hitachi
HE130
hitachi he1301
HL8314G
HE8807SG
HL8312E
Hitachi Scans-001
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Thermistor bth 471
Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier
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D01S14S
HL1541A/AC/FG/BF/DL/DM
D012140
HL1541
HL1541A/AC
HL1541FG
HL1541BF
HL1541DL
HE8815VG
HE8813VG
Thermistor bth 471
d 1548
10G 1550 optical laser in butterfly
HL1541A
HL1541DM
10 gb laser diode
AP-93
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
DD121S3
HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HE8815VG
HE8813VG
HE8815VG
hitachi sr 302
te 1819
HL1561A
HL1561AC
10 gb laser diode
Hitachi Scans-001
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