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    HL8319E Search Results

    HL8319E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL8319E Hitachi Semiconductor Laser Diode: 40mW Power: 850nm Wave Length: 40mA Current Scan PDF

    HL8319E Datasheets Context Search

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    HE1301

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are


    OCR Scan     		PDF HL8319E/G 001EGÃ HL8319E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE1301 HE8807SG HE8813VG HL8312E HL8319E HL8319G Hitachi Scans-001

    J835

    Abstract: HL8319G
    Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L8319E/G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are


    OCR Scan     		PDF L8319E/G HL8319E/G -----T-41-05 HL8319E/G 40rnW J835 HL8319G