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    HE1301 Price and Stock

    Vishay Beyschlag MCT0603HE1301BP100

    RES 1.3K OHM 0.1% 1/10W 0603
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    DigiKey MCT0603HE1301BP100 Reel 1,000
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    • 1000 $1.8144
    • 10000 $1.8144
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    Vishay Intertechnologies MCT0603HE1301BP100

    MCT 0603-15 0.1% VG01 P1 1K3 - Tape and Reel (Alt: MCT0603HE1301BP100)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MCT0603HE1301BP100 Reel 10 Weeks 1,000
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    • 1000 $1.89
    • 10000 $1.75
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    Mouser Electronics MCT0603HE1301BP100
    • 1 -
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    • 1000 $1.81
    • 10000 $1.81
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    Newark MCT0603HE1301BP100 Bulk 1,000
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    • 1000 $2.01
    • 10000 $1.87
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    Amphenol FCi HE1301

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HE1301 171 2
    • 1 -
    • 10 $2.25
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
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    Quest Components HE1301 136
    • 1 $4
    • 10 $4
    • 100 $1.5
    • 1000 $1.4
    • 10000 $1.4
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    HE1301 Datasheets Context Search

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    hitachi he1301

    Abstract: 0660H HE1301
    Text: HE1301 TR-Infrared Emitting Diodes IRED Description H E 1301T R is a 1.3 /im In G aA sP infrared e m it­ ting d iode with do u b le hetero ju n ctio n stru ctu re, w hich provides high speed response. T h e package with a receptacle is easily connected


    OCR Scan     		PDF HE1301 1301T HE1301TR hitachi he1301 0660H

    HE1301R

    Abstract: No abstract text available
    Text: HE1301R-Infrared Emitting Diodes IRED Description II H E 1301R is a 1.3 jum In G aA sP infrared em it­ ting d io d e w ith d o u b le h etero ju n ctio n stru ctu re, w hich provides high speed response. It is su itab le as a light source in high-speed


    OCR Scan     		PDF HE1301R-------Infrared 1301R HE1301R HE1301R

    Untitled

    Abstract: No abstract text available
    Text: 5HE D HITACHI / OPTOELECTRONICS HHIbSD-S DG121ÔS flbM « H I T M • H E 1 301 S U /M L/1 K InGaAsP IRED T The HE1301SG/M L/TR are 1.3 (J.m band infrared light emitting diodes for use as the light sources in opti­ cal fiber communications. They provide a high speed response due to their double heterojunction InGaAsP structure.


    OCR Scan     		PDF DG121Ã HE1301SG/M 01jtical HE1301SG/ML/TR HE1301ML)

    HE1301ML

    Abstract: No abstract text available
    Text: HE1301ML Infrared Emitting Diodes IRED Description H E 1301M L is a 1.3 /¿m In G aA sP infrared e m it­ ting d io d e w ith do u b le h etero ju n ctio n stru c tu re , w hich pro v id es high speed response. Optica) o u tp u t from the chip is directed to the


    OCR Scan     		PDF HE1301ML HE1301ML

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS S1E t • IMIbSOS QD1171D Mb? BiHITM HE1301R- T-4 T-J3 Infrared Em itting D iod es (IRED) Description HE1301R is a 1.3 /¿m InGaAsP infrared emit­ ting diode with double heterojunction structure, which provides high speçd response.


    OCR Scan     		PDF QD1171D HE1301R-------------- HE1301R HE1301R

    tic 1260

    Abstract: he1301sg
    Text: HE1301SG-Infrared Emitting Diodes IRED Description H E 1 3 0 1 S G is a 1.3 ¿ tm In G a A s P in fr a r e d e m it­ tin g d io d e w ith d o u b le h e te ro ju n c tio n s tr u c tu r e , w h ic h p ro v id e s h ig h s p e e d re s p o n se . H ig h c o u p lin g efficiency can b e re a liz e d u s in g a


    OCR Scan     		PDF HE1301SG-----Infrared HE1301SG tic 1260

    HE8807SG

    Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
    Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­


    OCR Scan     		PDF HL7832G/HG G012D32 HL7832G/HG HL7832HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6

    HE1301

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are


    OCR Scan     		PDF HL8319E/G 001EGÃ HL8319E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE1301 HE8807SG HE8813VG HL8312E HL8319E HL8319G Hitachi Scans-001

    HL7801

    Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
    Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838


    OCR Scan     		PDF HL671IG HL671I HL7801 HL7802 HL7806 HL7831 HL7832 HL7836 HL7838 HL83H HE8807CL HL7801E HL1324MF HL83M HE8812 hitachi he1301

    HE8815VG

    Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
    Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.


    OCR Scan     		PDF HL8311E/G HL8311E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M

    HL7836MG

    Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
    Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light


    OCR Scan     		PDF HL7836G/MG HL7836G/MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7836MG HE8807SG HL7836G HL8312E Hitachi Scans-001

    HE8811

    Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit­ able as a light source for laser beam printers, laser levelers and various other types of optical equipment.


    OCR Scan     		PDF HL7842MG HL7842MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8811 HE8403 HE8807SG HE8812SG HE8813VG HL8312E he8813 Hitachi Scans-001

    HE8813VG

    Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
    Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


    OCR Scan     		PDF HL8312E/G HL8312E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8813VG HE8403 HE8807SG HE8811 HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807

    HE8807SG

    Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


    OCR Scan     		PDF Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403

    hitachi he1301

    Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser


    OCR Scan     		PDF HL7838G D0120L42 HL7838G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, hitachi he1301 HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HL7838 Hitachi Scans-001 HE8403

    HL8314E

    Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


    OCR Scan     		PDF HL8314E/G 0G12a71 HL8314E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8314E XP 215 hitachi HE130 hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001

    Thermistor bth 471

    Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
    Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier


    OCR Scan     		PDF D01S14S HL1541A/AC/FG/BF/DL/DM D012140 HL1541 HL1541A/AC HL1541FG HL1541BF HL1541DL HE8815VG HE8813VG Thermistor bth 471 d 1548 10G 1550 optical laser in butterfly HL1541A HL1541DM 10 gb laser diode AP-93

    hitachi sr 302

    Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
    Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)


    OCR Scan     		PDF HL1561A/AC/BF DD121S3 HL1561A/AC/BF HL1561BF HL1561 HL1561BF) 561A/AC/BF) HE8815VG HE8813VG HE8815VG hitachi sr 302 te 1819 HL1561A HL1561AC 10 gb laser diode Hitachi Scans-001

    HL1221A

    Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.


    OCR Scan     		PDF HL1221 HL1221A/AC HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL1221A HL1221AC HL8312E Hitachi Scans-001 HE8403

    T9040

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are


    OCR Scan     		PDF HL8318E/G 441bEG5 HL8318E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, T9040 HE8807SG HE8813VG HL8312E HL8318E HL8318G Hitachi Scans-001

    "gate array" hitachi

    Abstract: L1521 L1323 HD6301 1105TG 8403R hitachi ic
    Text: SELECTIO N GUIDES FOR APPLICATIONS 1. T ELEC O M NET W O R K SY ST E M ^ H IT A C H I Hitachi America, Ltd. • Hitachi Plaza • 2000 Sierra Point Pkwy. • Brisbane, CA 94005-1819 • 415 589-8300 SELECTION GUIDES FOR APPLICATIONS 2. FOR P A B X (Private Auto Branch Exchange) A P P LIC A T IO N


    OCR Scan     		PDF JHA16811ANT/AM 16817N 8202T 1103T 1104TG 1105TG 1321D L1323T L1521A HL1561 "gate array" hitachi L1521 L1323 HD6301 1105TG 8403R hitachi ic

    HL8312E

    Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
    Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope


    OCR Scan     		PDF HL7841MG G012047 HL7841MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8312E 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE7601

    HL7802E

    Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
    Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.


    OCR Scan     		PDF HL7802E/G HL7802E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7802E HE8807SG HE8813VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040