Untitled
Abstract: No abstract text available
Text: HE8807SG/FL ODE-208-050A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050A
HE8807SG/FL
HE8807SG:
HE8807FL)
HE8807SG)
HE8807FL:
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HE8807FL
Abstract: HE8807SG
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ODE-208-998A
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
HE8807FL
HE8807SG
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Semiconductor Nuclear Radiation Detector
Abstract: HE8807FL HE8807SG nuclear radiation detector Hitachi DSA0047
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency
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HE8807SG/FL
ADE-208-998
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
Semiconductor Nuclear Radiation Detector
HE8807FL
HE8807SG
nuclear radiation detector
Hitachi DSA0047
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HE8807FL
Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Text: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050
HE8807SG/FL
HE8807SG:
HE8807FL:
HE8807FL)
HE8807SG)
HE8807FL
HE8807SG
Semiconductor Nuclear Radiation Detector
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Semiconductor Nuclear Radiation Detector
Abstract: Hitachi DSA0087 HE8807FL HE8807SG 208998
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ADE-208-998
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
Semiconductor Nuclear Radiation Detector
Hitachi DSA0087
HE8807FL
HE8807SG
208998
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HE8807SG
Abstract: HE8807FL
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG
HE8807FL
HE8807SG
HE8807FL
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Untitled
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998B Z Rev.2 Mar. 2005 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency
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HE8807SG/FL
ODE-208-998B
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
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radiation
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8407SG:
HE8407FL:
radiation
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Hitachi DSA002726
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8407SG:
HE8407FL:
HE8807SG
HE8807FL
Hitachi DSA002726
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opnext l
Abstract: No abstract text available
Text: HE8807SG/FL ODE2061-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
HE8807SG/FL
ODE2061-00
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
opnext l
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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HE8807CL
Abstract: HE8807FL
Text: HE8807SG/CL/FL GaAIAs Infrared Emitting Diodes Description The H E 8807S G /C L /F L are sin gle heterojunction structure G aA IA s light em itting d iod es with a w avelen gth o f 880 nm. Features • • • • H igh output, high efficien cy Narrow spectral width
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HE8807SG/CL/FL
8807S
8807C
HE8807SG:
HE8807CL:
HE8807FL:
HE8807SG)
HE8807CL)
HE8807CL
HE8807FL
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Untitled
Abstract: No abstract text available
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The H E8807SG /SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity H E8807SL/CL/FL
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HE8807SG/SL/CL/FL
E8807SG
E8807SL/CL/FL)
E8807SG
HE8807SG:
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807SG)
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HE8807CL
Abstract: XP20W
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL
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HE8807SG/SL/CL/FL
HE8807SG/SL/CL/FL
HE8807SL/CL/FL)
HE8807SG)
HE8807SG
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807CL
XP20W
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Untitled
Abstract: No abstract text available
Text: HE8807SG-Infrared Emitting Diodes IRED Description H E 8 8 0 7 S G is a 0 .8 (i m G a A IA s in fra re d e m it tin g d io d e w ith s in g le h e te ro ju n c tio n s tru c tu re . R a d ia n t d ire c tio n a lity is w id e a n d ra d ia n t in te n
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HE8807SG----Infrared
HE8807SG
10ns/div.
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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Untitled
Abstract: No abstract text available
Text: Section 6 Reliability T h is section c o v e rs p o in ts w h ich p articularly affect cu rrent, etc. to drift, an d u ltim a tely lead to the en d th e o p e ra tin g life lig h t e m ittin g d e v ic e s , an d of p ro v id e s so m e e x a m p l e s w h ich sh o u ld be studied
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HE8813VG
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8807
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L6312G
Abstract: 8325G HL6314M L6313
Text: Contents Product Lineup . Part Num bers.
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HR1103CX.
HR1104CX.
HR1107CR.
HR1201CX.
L6312G
8325G
HL6314M
L6313
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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HL7806
Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Text: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.
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