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    HE130 Search Results

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    HE130 Price and Stock

    WeEn Semiconductor Co Ltd PHE13003C,412

    TRANS NPN 400V 1.5A TO-92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHE13003C,412 Bulk 19,721 1
    • 1 $0.46
    • 10 $0.284
    • 100 $0.46
    • 1000 $0.11967
    • 10000 $0.08577
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    Mouser Electronics PHE13003C,412 3,879
    • 1 $0.45
    • 10 $0.284
    • 100 $0.18
    • 1000 $0.108
    • 10000 $0.085
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    Avnet Asia PHE13003C,412 16 Weeks 10,000
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    Avnet Silica PHE13003C,412 17 Weeks 5,000
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    EBV Elektronik PHE13003C,412 9 Weeks 5,000
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    WeEn Semiconductor Co Ltd PHE13003C,126

    TRANS NPN 400V 1.5A TO-92-3
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    DigiKey PHE13003C,126 Cut Tape 10,315 1
    • 1 $0.45
    • 10 $0.276
    • 100 $0.45
    • 1000 $0.11638
    • 10000 $0.09133
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    PHE13003C,126 Ammo Pack 10,000
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    Avnet Americas PHE13003C,126 Tube 12 Weeks 10,000
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    • 10000 $0.0679
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    Mouser Electronics PHE13003C,126 9,664
    • 1 $0.38
    • 10 $0.245
    • 100 $0.122
    • 1000 $0.094
    • 10000 $0.07
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    Avnet Silica PHE13003C,126 17 Weeks 10,000
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    EBV Elektronik PHE13003C,126 9 Weeks 10,000
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    WeEn Semiconductor Co Ltd PHE13005,127

    TRANS NPN 400V 4A TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHE13005,127 Tube 8,283 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.87
    • 1000 $0.24364
    • 10000 $0.18215
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    Mouser Electronics PHE13005,127 3,003
    • 1 $0.76
    • 10 $0.368
    • 100 $0.327
    • 1000 $0.229
    • 10000 $0.182
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    Newark PHE13005,127 Bulk 120 1
    • 1 $0.059
    • 10 $0.059
    • 100 $0.059
    • 1000 $0.059
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    TME PHE13005,127 1,038 1
    • 1 $0.555
    • 10 $0.306
    • 100 $0.226
    • 1000 $0.189
    • 10000 $0.189
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    Avnet Asia PHE13005,127 16 Weeks 6,000
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    Avnet Silica PHE13005,127 5,000 17 Weeks 1,000
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    EBV Elektronik PHE13005,127 5,000 9 Weeks 1,000
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    New Advantage Corporation PHE13005,127 2,000 1
    • 1 -
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    • 1000 $0.2481
    • 10000 $0.2296
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    WeEn Semiconductor Co Ltd PHE13007,127

    TRANS NPN 400V 8A TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHE13007,127 Tube 3,259 1
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $0.31646
    • 10000 $0.28877
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    Mouser Electronics PHE13007,127
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    • 10000 $0.261
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    TME PHE13007,127 893 1
    • 1 $0.718
    • 10 $0.472
    • 100 $0.38
    • 1000 $0.339
    • 10000 $0.339
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    Avnet Silica PHE13007,127 17 Weeks 1,000
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    EBV Elektronik PHE13007,127 2,000 9 Weeks 1,000
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    New Advantage Corporation PHE13007,127 2,000 1
    • 1 -
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    • 1000 $1.08
    • 10000 $1
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    Omega Engineering PHE-1304-EB

    PH ELECTRODE, PRE-AMPLIFIED ALPH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHE-1304-EB Bulk 1
    • 1 $228.15
    • 10 $228.15
    • 100 $228.15
    • 1000 $228.15
    • 10000 $228.15
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    Avnet Americas PHE-1304-EB Bulk 10 Weeks 1
    • 1 $152.34053
    • 10 $152.34053
    • 100 $152.34053
    • 1000 $152.34053
    • 10000 $152.34053
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    Newark PHE-1304-EB Bulk 1
    • 1 $152.34
    • 10 $152.34
    • 100 $152.34
    • 1000 $152.34
    • 10000 $152.34
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    HE130 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HE130 AMP Connectors Scan PDF
    HE13009 Unknown HIGH VOLTAGE SWITCH MODE APPLICICATIONS Original PDF

    HE130 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    hitachi he1301

    Abstract: 0660H HE1301
    Text: HE1301 TR-Infrared Emitting Diodes IRED Description H E 1301T R is a 1.3 /im In G aA sP infrared e m it­ ting d iode with do u b le hetero ju n ctio n stru ctu re, w hich provides high speed response. T h e package with a receptacle is easily connected


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    HE1301 1301T HE1301TR hitachi he1301 0660H PDF

    HE1302

    Abstract: No abstract text available
    Text: 1ÛE HE1302ML D • MMU205 0010=102 3 InGaAsP IRED HITACHI/ OPTOELECTRONICS Description r-v-iá HE1302M L is a high-power 1.3 ftm InGaAsP infrared emitting diode with double heterojunction structure, which provides high speed response. Optical output from the chip is directed to the


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    HE1302ML HE1302M MMU205 HE1302 PDF

    electronic devices

    Abstract: No abstract text available
    Text: N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13007 █ HIGH VOLTAGE SWITCH MODE APPLICATION █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220AB


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    HE13007 O-220AB electronic devices PDF

    HE13003

    Abstract: 15A H3
    Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13003 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220


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    HE13003 O-220 100mA HE13003 15A H3 PDF

    HE13001

    Abstract: 400V voltage regulator he130
    Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13001 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92


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    HE13001 900mW 100mA, HE13001 400V voltage regulator he130 PDF

    HE13009

    Abstract: he130
    Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13009 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220


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    HE13009 O-220 HE13009 he130 PDF

    HE1301R

    Abstract: No abstract text available
    Text: HE1301R-Infrared Emitting Diodes IRED Description II H E 1301R is a 1.3 jum In G aA sP infrared em it­ ting d io d e w ith d o u b le h etero ju n ctio n stru ctu re, w hich provides high speed response. It is su itab le as a light source in high-speed


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    HE1301R-------Infrared 1301R HE1301R HE1301R PDF

    Untitled

    Abstract: No abstract text available
    Text: 5HE D HITACHI / OPTOELECTRONICS HHIbSD-S DG121ÔS flbM « H I T M • H E 1 301 S U /M L/1 K InGaAsP IRED T The HE1301SG/M L/TR are 1.3 (J.m band infrared light emitting diodes for use as the light sources in opti­ cal fiber communications. They provide a high speed response due to their double heterojunction InGaAsP structure.


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    DG121Ã HE1301SG/M 01jtical HE1301SG/ML/TR HE1301ML) PDF

    he130

    Abstract: No abstract text available
    Text: HE1303SG/ML InGaAsP IRED Description T he H E 1303SG /M L are 1.3 nm band InG aA sP infrared light em itting diodes w ith a double heterojunction structure. T hey are suitable as light sources for optical fiber com m unication system s. Features Package Type


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    HE1303SG/ML HE1303SG/ML HE1303SG: HE1303ML: HE1303SG HE1303ML E1303SG/ML HE1303ML) he130 PDF

    HE13002

    Abstract: No abstract text available
    Text: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13002 █ APPLICATIONS High Voltage switching And Speed Switching █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 T stg ——Storage Temperature………………………… -55~150℃


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    HE13002 100mA 200mA HE13002 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HE13005 █ HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control


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    HE13005 O-220AB PDF

    HE13009

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HE13009 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control


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    HE13009 O-220AB HE13009 PDF

    HE1301ML

    Abstract: No abstract text available
    Text: HE1301ML Infrared Emitting Diodes IRED Description H E 1301M L is a 1.3 /¿m In G aA sP infrared e m it­ ting d io d e w ith do u b le h etero ju n ctio n stru c tu re , w hich pro v id es high speed response. Optica) o u tp u t from the chip is directed to the


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    HE1301ML HE1301ML PDF

    Untitled

    Abstract: No abstract text available
    Text: HE1303SG/ML InGaAsP IRED Description The HE1303SG/ML are 1.3 |im band InGaAsP infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features Package Type • HE1303SG: SG


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    HE1303SG/ML HE1303SG/ML HE1303SG: HE1303SG HE1303ML: HE1303ML G150/125 HE1303ML HE1303SG. PDF

    tic 1260

    Abstract: he1301sg
    Text: HE1301SG-Infrared Emitting Diodes IRED Description H E 1 3 0 1 S G is a 1.3 ¿ tm In G a A s P in fr a r e d e m it­ tin g d io d e w ith d o u b le h e te ro ju n c tio n s tr u c tu r e , w h ic h p ro v id e s h ig h s p e e d re s p o n se . H ig h c o u p lin g efficiency can b e re a liz e d u s in g a


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    HE1301SG-----Infrared HE1301SG tic 1260 PDF

    Untitled

    Abstract: No abstract text available
    Text: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE


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    PDF

    HE1402

    Abstract: connectors HE13 he14 he14 Tyco HE1302 HE140 HE13-HE14 HE13 HE-14 C93401
    Text: Product specification MODULAR HEADERS AND PLUGS ACCORDING TO IEC 60603-8 SERIES HE13 HE14 SERIES 108-15053 04 December 07 Rev. H 1. SCOPE 1.1. Content This document covers the performances, tests, and quality requirements of a modular family of headers (0,635mmx0,635mm .0025x.0025 square pins) on a 2,54mm (.100) grid and plugs, designed for wire to board


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    635mmx0 635mm 0025x HE1402 connectors HE13 he14 he14 Tyco HE1302 HE140 HE13-HE14 HE13 HE-14 C93401 PDF

    transistor 13002

    Abstract: KSE13002 13002 to-126 TRANSISTOR KSE13002HE13002 transistor13002 13002 TRANSISTOR 13002 npn D142AG-00
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13002 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D142AG-00 芯片厚度:240±20µm 管芯尺寸:1420x1420µm 2 焊位尺寸:B 极 300×245µm 2,E 极 350×245µm 2


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    100mm D142AG-00 KSE13002HE13002 O-126 10mAIB 10VIC 200mA 100mA transistor 13002 KSE13002 13002 to-126 TRANSISTOR KSE13002HE13002 transistor13002 13002 TRANSISTOR 13002 npn D142AG-00 PDF

    transistor 13005

    Abstract: KSE13005 D283AG-00 transistor E 13005
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D283AG-00 芯片厚度:240±20µm 管芯尺寸:2830x2830µm 2 焊位尺寸:B 极 1200×420µm 2,E 极 1140×540µm 2


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    100mm D283AG-00 KSE13005HE13005 O-220 10mAIB 10VIC 125VIC transistor 13005 KSE13005 D283AG-00 transistor E 13005 PDF

    HE8807SG

    Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
    Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­


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    HL7832G/HG G012D32 HL7832G/HG HL7832HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6 PDF

    HE1301

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are


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    HL8319E/G 001EGÃ HL8319E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE1301 HE8807SG HE8813VG HL8312E HL8319E HL8319G Hitachi Scans-001 PDF