igbt flash
Abstract: GT20G102
Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
2-10S1C
igbt flash
GT20G102
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Untitled
Abstract: No abstract text available
Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
10S1C
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
2-10S2C
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
2-10S2C
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •
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OCR Scan
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GT2QG102
GT20G102
2-10S2C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive
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OCR Scan
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GT20G102
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cs7e
Abstract: No abstract text available
Text: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode •
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OCR Scan
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GT20G102
2-10S2C
cs7e
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1200cu
Abstract: No abstract text available
Text: GT20G102 SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in nn 1 .32 . High Input Impedance . Low Saturation Voltage : VcE sat = 8V(Max.)(Ic=130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage
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OCR Scan
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GT20G102
1200cu
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LE20A
Abstract: No abstract text available
Text: GT20G102 SM T O S H IB A T O S H IB A IN SU LATED G ATE B IP O LA R TRA N SISTO R SILICON N-CHANNEL IG BT GT20G102(S M) STR O BE FLASH A PPLIC A TIO N S • • • • H igh Input Im pedance Low Saturation V oltage Enhancem ent-M ode 12V Gate Drive : V C E (sat) = 8V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
GT20G10
2-10S2C
LE20A
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VcE sat = 8-OV (Max.) (IC = 130A)
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OCR Scan
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GT20G102
-I-19V
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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OCR Scan
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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vqe 24 d
Abstract: GT20G102 vqe 208 e
Text: T O S H IB A GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive : VCE sat = 8.0V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
vqe 24 d
GT20G102
vqe 208 e
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TO SHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 2 ( S M) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 130A) Enhancement-Mode
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OCR Scan
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GT20G102
GT20G10
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
GT20G1
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL MOS TYPE -GT20G102ÍSM STROBE FLASH APPLICATIONS Unit in ram 1 0 .3 MAX . High Input Impedance . Low Saturation Voltage : V ç e sat)= 8V(Max.) (Ic=130A) . Enhancenent-Mode . 12V Gate Drive riAxinun ratings (Ta-25° o SYMBOL CHARACTERISTIC
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OCR Scan
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-GT20G102
Ta-25°
GT20G102C
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Untitled
Abstract: No abstract text available
Text: GT20G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
GT20G1
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiTJiifiin STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VcE sat) = 8.0V (Max.) (IC = 130A) MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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GT20G102
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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OCR Scan
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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OCR Scan
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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OCR Scan
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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