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    GT20D101 Search Results

    GT20D101 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT20D101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT20D101 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Scan PDF
    GT20D101 Toshiba N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) Scan PDF
    GT20D101O Toshiba Silicon N-Channel IGBT - High Power Amplifier Apps Scan PDF
    GT20D101Y Toshiba Silicon N-Channel IGBT - High Power Amplifier Apps Scan PDF

    GT20D101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


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    PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    transistor d 4515

    Abstract: Transistor 4515 2-21F1C GT20D101
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201


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    PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101

    T20D201

    Abstract: gt20d201
    Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101


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    PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : |Y fe|= 10S(Typ.)


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    PDF GT20D101 GT20D201 F001EAA2'

    GT20D101

    Abstract: No abstract text available
    Text: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5


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    PDF GT20D101 GT20D201 100mA GT20D101

    IGBT gt20d201

    Abstract: No abstract text available
    Text: SILICON N CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage VCES=-250V MIN. . High Forward Transfer Admittance I Yfe I =10S (TYP.) 20.5M A X ¿ 3 .3 ± 0 .2 . Complementary to GT20D101 . Enhancement-Mode 2.5 3.0 + 2.5


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    PDF GT20D201 GT20D101 -250V -250V, -100yA, -100mA IGBT gt20d201

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


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    PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 03.3±O .2 2 0.5M A X • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe | = 10S(Typ.)


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    PDF GT20D101 GT20D201

    toshiba gt20d101

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL G T 2 0 D 1 01 DATA SILICON N CHANNEL TYPE GT20D101 Unit in mm HIGH POWER AMPLIFIER APPLICATION. 20.5MAX • • • • High Breakdown Voltage : VCES —250V (Min.) High Forward Transfer Admittance : |Yfe|= 10S(Typ.)


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    PDF GT20D101) --250V GT20D201 GT20D101 toshiba gt20d101

    IGBT gt20d201

    Abstract: p channel igbt GT20D201
    Text: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101


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    PDF GT20D201 --250V GT20D101 IGBT gt20d201 p channel igbt GT20D201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 0d.S±O.2 2 0.5M A X • High Breakdown Voltage : V C E S ~ 250V Min. • High Forward Transfer Admittance : |Yfe| = 10S(Typ.)


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    PDF GT20D101 GT20D201

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


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    PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    GT20D201

    Abstract: toshiba gt20d201 GT20 GT20D101
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101


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    PDF GT20D201 -250V GT20D101 961001EAA2' GT20D201 toshiba gt20d201 GT20 GT20D101

    GT200101

    Abstract: GT20D101 GT20D201 toshiba gt20d101 TOS-M
    Text: 45E D m TOSM T 0 T 7 5 5 G 0017äMfl T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSH IB A D I S C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v . High Forward Transfer Admittance


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    PDF 1CH755G GT20D101 GT20D201 T-39-31 GT200101 GT20D101 GT20D201 toshiba gt20d101 TOS-M

    GT20D201

    Abstract: GT20D101 10S0V
    Text: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201


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    PDF GT20D101 10S0VP-) GT20D201 GT20D201 GT20D101 10S0V

    gt20d201

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE P T ^ n n ^ fM GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm [Si : VcES=~250V MIN. . Complementary to GT20D101 ) oin esi < <1 1 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) 5 .4 5 ± 0 .1 5


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    PDF GT20D201 GT20D101 gt20d201

    Toshiba gt20d101

    Abstract: GT20D101 GT20D201
    Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)


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    PDF GT20D101 GT20D201 961001EAA2' Toshiba gt20d101 GT20D101 GT20D201

    toshiba gt20d101

    Abstract: GT20D101 GT20D201
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)


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    PDF GT20D101 GT20D201 toshiba gt20d101 GT20D101 GT20D201

    TOSH18A

    Abstract: No abstract text available
    Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ. Complementary to GT20D201


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    PDF GT20D101 --250V GT20D201 TOSH18A

    Untitled

    Abstract: No abstract text available
    Text: 45E D • TDT7E50 0017fl4fl I T OSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N C H A N N EL T Y P E TOSHIBA T DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 03 : V c e s =250V (MIN.) 3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.)


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    PDF TDT7E50 0017fl4fl GT20D101 GT20D201 DD17ASD

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D101


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    PDF GT20D201 GT20D101

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe|= 10S(Typ.) Complementary to GT20D201


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    PDF GT20D101 GT20D201

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


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    PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    Untitled

    Abstract: No abstract text available
    Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)


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    PDF T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201