Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT20G10 Search Results

    SF Impression Pixel

    GT20G10 Price and Stock

    Toshiba America Electronic Components GT20G101

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics GT20G101 41
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    GT20G10 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT20G101 Toshiba TRANS IGBT CHIP N-CH 400V 20A 3(2-10S1C) Original PDF
    GT20G101 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Original PDF
    GT20G101 Toshiba Discrete IGBTs Original PDF
    GT20G101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT20G101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT20G101(SM) Toshiba N-Channel IGBT Original PDF
    GT20G101SM Toshiba IGBT Original PDF
    GT20G101SM Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT20G101(SM) Toshiba TRANS IGBT CHIP N-CH 400V 20A 3(2-10S2C) Scan PDF
    GT20G101SM Toshiba N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Scan PDF
    GT20G102 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Original PDF
    GT20G102 Toshiba Discrete IGBTs Original PDF
    GT20G102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT20G102(SM) Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT20G102(SM) Toshiba N-Channel IGBT Original PDF
    GT20G102SM Toshiba IGBT Original PDF
    GT20G102SM Toshiba N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Scan PDF

    GT20G10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S2C

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S1C GT20G101

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S1C GT20G101

    igbt flash

    Abstract: GT20G102
    Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G102 2-10S1C igbt flash GT20G102

    Untitled

    Abstract: No abstract text available
    Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G102 10S1C

    GT20G102

    Abstract: No abstract text available
    Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G102 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 10S2C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT2QG102 GT20G102 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive


    OCR Scan     		PDF GT20G102

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G101 TcS70Â

    Untitled

    Abstract: No abstract text available
    Text: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive


    OCR Scan     		PDF GT20G101

    cs7e

    Abstract: No abstract text available
    Text: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT20G102 2-10S2C cs7e

    Untitled

    Abstract: No abstract text available
    Text: GT20G10KSM TOSHIBA TO SH IBA IN SULATED GATE BIPOLAR TRAN SISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V cE (sat) = 8V (Max.) (Ic = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G10KSM) 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE GT20G10KSM — STROBE FLASH APPLICATIONS Unit in mn 1Q.3MAX . High Input Impedance 5.0 . Low Saturation Voltage : VcE sat)=8V(Max.)(Ic=130A) . Enhancement-Mode 0.1 . 20V Gate Drive - r ¥JlHL y 2.54± 0.25 2 54±0.25 HAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF GT20G10KSM)

    GT20

    Abstract: GT20G101
    Text: TOSHIBA GT20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 1 SM) STROBE FLASH APPLICATIONS Unit in mm High Input Impedance Low Saturation Voltage : V qe (sat) = 8V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive


    OCR Scan     		PDF GT20G101 2-10S2C GT20

    LE20A

    Abstract: No abstract text available
    Text: GT20G102 SM T O S H IB A T O S H IB A IN SU LATED G ATE B IP O LA R TRA N SISTO R SILICON N-CHANNEL IG BT GT20G102(S M) STR O BE FLASH A PPLIC A TIO N S • • • • H igh Input Im pedance Low Saturation V oltage Enhancem ent-M ode 12V Gate Drive : V C E (sat) = 8V (Max.) (IC = 130A)


    OCR Scan     		PDF GT20G102 GT20G10 2-10S2C LE20A

    Untitled

    Abstract: No abstract text available
    Text: GT20G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VcE sat = 8-OV (Max.) (IC = 130A)


    OCR Scan     		PDF GT20G102 -I-19V

    Untitled

    Abstract: No abstract text available
    Text: GT20G102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT fi T ? n fi 1 n i Unit in mm STROBE FLASH APPLICATIONS 10.3MAX • • • • High Input Impedance Low Saturation Voltage : V j e (5at = 8V (Max.) (Iq = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G102 2-10S1C

    Untitled

    Abstract: No abstract text available
    Text: GT20G101 SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in mm 10.3MAX . High Input Impedance - Low Saturation Voltage : VcE sat =8V(Itax. ) (Ic=130A) . Enhancement-Mode . 20V Gate Drive 1.6 MAX 0.76 MAXIMUM RATINGS (Ta-25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF GT20G101 Ta-25

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    vqe 24 d

    Abstract: GT20G102 vqe 208 e
    Text: T O S H IB A GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive : VCE sat = 8.0V (Max.) (IC = 130A)


    OCR Scan     		PDF GT20G102 vqe 24 d GT20G102 vqe 208 e

    AFC5

    Abstract: No abstract text available
    Text: GT20G101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT riT ?n riim Unit in mm STROBE FLASH APPLICATIONS 10.3MAX • • • • 1.32 5.0 High Input Impedance Low Saturation Voltage : Vq e sat = ^V (Max.) (Iq = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G101 AFC5

    GT20G102

    Abstract: No abstract text available
    Text: GT20G102 SM TO SHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 2 ( S M) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G102 GT20G10

    Untitled

    Abstract: No abstract text available
    Text: GT20G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 130A)


    OCR Scan     		PDF GT20G102 GT20G1