Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm
|
Original
|
GRM15/18/21/31
GRM1882C1H101JA01p
100pF,
50Vdc)
180mm
330mm
60ppm/
100pF
50Vdc
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
|
Original
|
GRM1882C1H101JA01p
100pF,
50Vdc)
180mm
330mm
60ppm/
100pF
50Vdc
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
|
Original
|
GRM1882C1H101JA01p
100pF,
50Vdc)
180mm
330mm
60ppm/
100pF
50Vdc
|
PDF
|
85500 transistor
Abstract: MZB1001T02 MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker
Text: 仕様書番号 ：MZB1001T02_Ver.2.0 Drawing No. P. 1/18 仕 様 書 Specification of Piezoelectric Microblower MZB1001T02 承 認 Approved by 決定年月日 Date 確 認 Checked by 担 当 Issued by October 11, 2011 1. 適用 Scope 当納入仕様書は一般電子機器製品に使用する圧電マイクロブロア 以下、ブロア について規定します。
|
Original
|
MZB1001T02
MZB1001T02
85500 transistor
MICROblower
piezoelectric blower
MICRO blower
RK73Z1JTTD
GRM1882C1H101JA01D
GRM1882C1H
corrugated carton
diagram PRESSURE cooker
|
PDF
|
RD07MUS2B
Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
|
Original
|
AN-900-039-A
RD07MUS2B
763-870MHz
RD07MUS2B:
084YH-G"
RD07MUS2B
870MHz
250mA
characteristic1JA01
GRM1882C1H101JA01
Single-Stage amplifier
GRM2162C1H151JD01E
817MHz
RD07M
|
PDF
|
atc100a2r4b
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
|
Original
|
NE5550979A
R09DS0031EJ0100
IEC61000-4-2,
NE5550979A
NE5550979A-AZ
atc100a2r4b
|
PDF
|
GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
|
Original
|
GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
|
Original
|
NE5550979A
R09DS0031EJ0200
IEC61000-4-2,
NE5550979A
NE5550979A-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E
|
Original
|
RD02LUS2
470MHz
RD02LUS2
15dBTyp
470MHz
18dBTyp
|
PDF
|
LV8736
Abstract: LV8734 2A 473J LV8732 LV8735
Text: SANYO Semiconductors APPLICATION NOTE LV8731V LV8732V LV8734V LV8735V LV8736V Bi-CMOS LSI PWM Constant-Current Control Stepping Motor Driver Overview The LV873x series is a 2-channel H-bridge driver IC that can switch a stepping motor driver, which is capable of
|
Original
|
LV8731V
LV8732V
LV8734V
LV8735V
LV8736V
LV873x
1/16-step
LV8731/32,
LV8734,
LV8735/36,
LV8736
LV8734
2A 473J
LV8732
LV8735
|
PDF
|
GRM0222C1C330GD05
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
|
Original
|
GRM55DR72E334KW01#
GRM55DR72E474KW01#
GRM55DR72E684KW01#
GRM55DR72E105KW01#
GRM55DR72D334KW01#
GRM55DR72D474KW01#
GRM55DR72D684KW01#
200Vdc
250Vdc
GRM55DR72D105KW01#
GRM0222C1C330GD05
|
PDF
|
S1S60000
Abstract: MCR03*J102 resistor motolora
Text: Intelligent Network Controller for Embedded System S1S60000 Technical Manual S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of SEIKO EPSON. SEIKO EPSON reserves the right to make changes to this material without
|
Original
|
S1S60000
S1S60000
E-08190
MCR03*J102 resistor
motolora
|
PDF
|
ATC100A101JT
Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm
|
Original
|
NE5550979A
R09DS0031EJ0200
IEC61000-4-2,
HS350
NE5550979A
ATC100A101JT
Waka 01K0790-20
ATC100A3R3BW
GRM1882C1H101JA01
GRM31CR72A105KA01B
R-4775
|
PDF
|
GRP1552C1H680
Abstract: GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01
Text: Capacitors Monolithic Ceramic Capacitors Temperature Compensating JIS Temperature Compensating Type 25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions mm W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3
|
Original
|
25/50V
GRP155
GRM155
GRM188*
GRM216
GRM219
GRM21B
GRM319
GRM31M
GRM31C
GRP1552C1H680
GRP1552
GRP1552C1H120JZ01
GRP1552C1H101JD01
GRM1882C1H150JA01
GRP15X4C1H2R0
GRM2192C2A331JZ01
GRM1882C1H8R0DZ01
GRM1882C1H182JA01
|
PDF
|
|
|
R1766
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
|
Original
|
NE5550979A
R09DS0031EJ0300
IEC61000-4-2,
NE5550979A
NE5550979A-A
R1766
|
PDF
|
XC61FN2712MR
Abstract: philips HD6 series MC-306, 32.768kHz
Text: MF1497-02 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
MF1497-02
S1S60000
XC61FN2712MR
philips HD6 series
MC-306, 32.768kHz
|
PDF
|
S1S60000F00A500
Abstract: 10EFh GRM188B11H104KA01D epson MARKING CODE MC 1FW 46
Text: Intelligent Network Controller S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
S1S60000
S1S60000F00A500
10EFh
GRM188B11H104KA01D
epson MARKING CODE MC
1FW 46
|
PDF
|
GRM1882C1H5R0CZ01D
Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V
|
Original
|
AN-UHF-111
RD00HVS1
RD02MUS1B
400-470MHz,
470MHz.
RD00HVS1:
RD02MUS1B:
103AJ-G"
400MHz
470MHz,
GRM1882C1H5R0CZ01D
GRM1882C1H101JA01D
GRM188R11H102KA01D
capasitor 6.5v .14 f
RPC05-101J
GRM1882C1H5R0C
grm188r11h
GRM1882C1H150JA01D
RPC05-0R0
|
PDF
|
GRM1882C1H330JA01D
Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
|
Original
|
AN-UHF-108-A
RD02MUS1B
470MHz,
470MHz.
RD02MUS1B:
093AF-G"
400MHz
435MHz
LLQ1608-F3N6
300pF
GRM1882C1H330JA01D
GRM1882C1H101JA01D
GRM1882C1H470JA01D
GRM1882C1H120DZ01D
GRM1882C1H301JA01D
rd02mus1
|
PDF
|
MCR03EZHJ
Abstract: GRM188B11H104KA01D GRM188B11H103KA01D philips HD6 series Clause-22 93C46 Hitachi GRM188B11H103KA01 MCR03*J102 resistor S1S60000 00A1
Text: MF1497-01 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
MF1497-01
S1S60000
E-08190
MCR03EZHJ
GRM188B11H104KA01D
GRM188B11H103KA01D
philips HD6 series
Clause-22
93C46 Hitachi
GRM188B11H103KA01
MCR03*J102 resistor
S1S60000
00A1
|
PDF
|
philips HD6 series
Abstract: TOREX MARKING RULE
Text: Intelligent Network Controller S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
S1S60000
philips HD6 series
TOREX MARKING RULE
|
PDF
|
SIS60000
Abstract: philips HD6 series epson Service Manual GRM188B11H103K
Text: MF1497-03 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
MF1497-03
S1S60000
SIS60000
philips HD6 series
epson Service Manual
GRM188B11H103K
|
PDF
|
GRM21bc81c106
Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
|
Original
|
20eristics
ISO14001
C02E-18
GRM21bc81c106
GRM155B11
grm155b31a474ke
GRM32EB30J107
GRM31CB31
grm1882c1h100
GRM31BR7
GJM0334
GRM188R11H104
GRM033R61A104KE
|
PDF
|
gp 542
Abstract: GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 RD05MMP1 GRM1884C1H1R0CZ01 GRM1882C1H151JA01
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-030-A Date : 25th Sep. ‘07 Rev.date : 30th Jun. 2010 Prepared : H. Sakairi S. Kametani Confirmed SUBJECT: : T.Okawa RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
|
Original
|
AN-900-030-A
RD05MMP1
800-900MHz
RD05MMP1:
064XA-G
RD05MMP1
800-900MHz
gp 542
GRM1882C1H4R0CZ
Single-Stage amplifier
GRM1882C1H
GRM1882C1H8R0DZ01
GRM1882C1H101JA01
1/Diode gp 542
GRM1884C1H1R0CZ01
GRM1882C1H151JA01
|
PDF
|
