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    Cal Crystal Lab Inc / Comclok Inc CM31AF-7.6817MHZ

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    817MHZ Datasheets Context Search

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    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773

    RD07MUS2B

    Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-039-A RD07MUS2B 763-870MHz RD07MUS2B: 084YH-G" RD07MUS2B 870MHz 250mA characteristic1JA01 GRM1882C1H101JA01 Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M

    GRM1882C1H100JA01D

    Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D

    RD07MUS2B

    Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    Untitled

    Abstract: No abstract text available
    Text: CDMA RF SAW Filter SF14 Series Features How to Order SF 14 - 0881 M 5 UB B1 • Small size • Low insertion loss • High selectivity • Hermetic seal ① ② ③ ④ ⑤ ⑥ ⑦ ① Type of Product SAW Filter ② Package Size ③ Nominal Center Frequency


    Original     		PDF SF14-0881M5UBB1 SF14-0881M5UUA1 869MHz 894MHz SF14-0878M5UBA1

    RD07MUS2B

    Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2

    Untitled

    Abstract: No abstract text available
    Text: Home News Global Contact Products About Electronic Components & Devices Sitemap RF SAW Filter Product List GSM Size L x W x H mm Output Application Pass Band Frequency SF14-0881M5UBA1 1.4 x 1.1 × 0.6 Balanced GSM850 Rx 869MHz 894MHz SF14-0942M5UBA1 1.4 × 1.1 × 0.6


    Original     		PDF SF14-0881M5UBA1 GSM850 869MHz 894MHz SF14-0942M5UBA1 GSM900 925MHz 960MHz SF14-1842M5UBA1 GSM1800

    Untitled

    Abstract: No abstract text available
    Text: CDMA RF SAW Filter SF14 Series Features How to Order SF 14 - 0881 M 5 UB B1 • Small size • Low insertion loss • High selectivity • Hermetic seal ① ② ③ ④ ⑤ ⑥ ⑦ ① Type of Product SAW Filter ② Package Size ③ Nominal Center Frequency


    Original     		PDF 869MHz 894MHz 824MHz 849MHz 1930MHz 1990MHz

    817MHz

    Abstract: No abstract text available
    Text: CDMA RF SAW Filter SF14 Series Features How to Order SF 14 - 0881 M 5 UB B1 • Small size • Low insertion loss • High selectivity • Hermetic seal ① ② ③ ④ ⑤ ⑥ ⑦ ① Type of Product SAW Filter ② Package Size ③ Nominal Center Frequency


    Original     		PDF 869MHz 894MHz 824MHz 849MHz 1930MHz 1990MHz 817MHz

    2SA601

    Abstract: TlO31
    Text: Philips Semiconductors Product specification Low-voltage LNA and mixer-1 GHz SA601 PIN C O N FIG U R A TIO N DES C R IPTIO N FEATURES The SA601 is a combined RF amplifier and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier


    OCR Scan     		PDF SA601 800-1200MHz. 900MHz 900MHz. SA601 2SA601 TlO31

    800-1200MHZ

    Abstract: filter 900MHz noise figure Mixer Output IP3 41 dBm 2Ghz mixer amplifier 900mhz amplifier mixer circuit diagram CL04 12 mixer SA601 SA601DK
    Text: NAPC/PHILIPS SEMICOND b7E D m bbSB'ISM QQö'iOSS 7S1 « S I C B Philips Semiconductors RF Communications Products Objective specification Low voltage LNA and mixer - 1GHz SA601 DESCRIPTION FEATURES The SA601 is a combined RF amplifier and mixer designed for high-performance


    OCR Scan     		PDF SA601 SA601 800-1200MHz. 900MHz 900MHz. 800-1200MHZ filter 900MHz noise figure Mixer Output IP3 41 dBm 2Ghz mixer amplifier 900mhz amplifier mixer circuit diagram CL04 12 mixer SA601DK