fototransistor BPW 39
Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.
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EN60825-1
GETY6091
GPLY6899
GPLY6880
fototransistor BPW 39
fototransistor BPX 81
opto P180
marking s4 diode smt
SFH 300-3/4 datasheet
OSRAM IR emitter IRL
P3596
foto transistor
SFH 229
foto sensor
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ABB DC Main Circuit breaker 2POLE
Abstract: IEC-157-1 wiring diagram of rccb ABB STOTZ-KONTAKT S 212 abb timer stt 11 51841 stotz s 212 IEC 60947-2 ABB SZ-ESK abb s210
Text: Technical Data System pro M Industrial Miniature Circuit-Breakers S 220 series System pro M 1 System pro M When connecting aluminum conductors, ensure that the contact surfaces of the conductors are cleaned, brushed and greased. For finely stranded conductors,
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Form00
D0201
ABB DC Main Circuit breaker 2POLE
IEC-157-1
wiring diagram of rccb
ABB STOTZ-KONTAKT S 212
abb timer stt 11
51841
stotz s 212
IEC 60947-2 ABB
SZ-ESK
abb s210
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Untitled
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
PB03-170RFPP
PB03-091RFPP)
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178rf
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor
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AGR18125E
PB03-178RFPP
178rf
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AGERE
Abstract: AGR18125E AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
Text: Product Brief November 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor
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AGR18125E
AGR18125E
PB04-012RFPP
PB03-178RFPP)
AGERE
AGR18125EF
AGR18125EU
AGR18125XF
AGR18125XU
JESD22-C101A
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AGR18125EF
Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor
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AGR18125E
AGR18125E
PB04-078RFPP
PB04-012RFPP)
AGR18125EF
AGR18125EU
AGR18125XF
AGR18125XU
JESD22-C101A
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"RF Power Amplifier"
Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A
Text: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
AGR18030E
PB04-077RFPP
PB04-077RFPP)
"RF Power Amplifier"
AGERE
AGR18030EF
AGR18030EU
AGR18030XF
AGR18030XU
AGR21045F
AGR21045U
JESD22-C101A
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
T10-12,
PB04-011RFPP
PB03-170RFPP)
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AGR18060EF
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for
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AGR18060E
PB03-171RFPP
PB03-105RFPP)
AGR18060EF
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Untitled
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor
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AGR18125E
AGR18125E
a712-4106)
PB03-178RFPP
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gl 3201
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for
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AGR18090E
PB03-172RFPP
PB03-090RFPP)
gl 3201
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
DS04-134RFPP
DS04-068RFPP)
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AGR09090EF
Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
AGR09090EF
DS04-153RFPP
DS04-134RFPP)
JESD22-C101A
ZX18
grm40x7r103k100al
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100B120JW500X
Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
DS04-068RFPP
DS04-064RFPP)
100B120JW500X
grm40x7r103k100al
100B470JW500X
100B100JW500X
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agere c8 c1
Abstract: 100b8r2jw 100B6R8JW
Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09045E
Hz--895
DS02-219RFPP
agere c8 c1
100b8r2jw
100B6R8JW
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J118 MOSFET
Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J
Text: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
incorporati2-4106)
DS01-209RFPP
J118 MOSFET
j122 mosfet
AGR09085EF
AGR09085EU
JESD22-A114
gl 3201
J122 transistor
mosfet j122
RM73B2B120J
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
delivering10-12,
DS04-055RFPP
DS04-028RFPP)
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Untitled
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
ca1212
DS04-028RFPP
DS03-057RFPP)
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PDF
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Untitled
Abstract: No abstract text available
Text: IIC Connectors Ib IBULGIN EN60 320-1 Standard Sheet C8 Class II Cold Condition Flange Panel Mount Inlet 15.5 Figure of Eight 2.8m m Solder Tabs Connectors 2.5A, 250V a.c. Snap Fit to Panel Inlet Figure of Eight 15.5 Fits Panel sizes 1, 1.5 or 2mm 21.3 23.70
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OCR Scan
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PX0784/28
PX0785/28
PX0786/PC
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification Octal registered transceiver; 3-state; inverting FEATURES • • • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. CMOS low power consumption Direct Interface with TTL levels
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74LVC640
74LVC533
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PDF
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marking code SOT23 SSi
Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23
Text: i Thaïï HEW LETT mLfiM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features • High Perform ance Bipolar T ransistor Optimized for Low Current, Low Voltage O peration • 900 MHz Performance:
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AT-32011
AT-32033
AT-32011:
AT-32033:
OT-23
OT-143
OT-143
AT-32011)
OT-23
AT-32033)
marking code SOT23 SSi
AT-32011-BLK
AT-32011-TR1
AT-32033
AT-32033-BLK
AT-32033-TR1
code marking ssi sot-23
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TL0251
Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
Text: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5
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LD-105VR
LD-404VR
10x10
LD-602VR
LD-603VR
LD-701VR
LD-702VR
LD-706VR
13x18
LD1203VR
TL0251
hp 3101
LD1203LR
LD1203VR
LD-404VR
LD-602VR
LD-603VR
LD-701VR
LD-702VR
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MRF942
Abstract: NF50
Text: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features
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MRF942/D
MRF942
C68593
MRF942
NF50
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PBT-GF20
Abstract: PBT-GF20 CONNECTOR PBT-GF20 2.2 PBT-GF30 PBT-QF30 pbtgf20 PBT-GF-20 molex CT Connector SD-64320-001 SD-98993-008
Text: 1-FOR LLUSTRATIGN PURPOSE TtC FEMALE HOUSMG SHOWN B THE ROOT WFE OUTPUT VERSION COONi 1 2-APPPUCATDN SPECFCATKM AS-64319-001 3-WRES EXTERNAL DlAfCTER USED: FOR CPO* TERtWAL USE WRES WITH AN EXTERNAL DWETER BETWEEN *125MM FOR CPIS TERMNAh USE WRES WITH AN EXTERNAL DIAIETER BETWEEN «U O ffl
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PBT-GF20Â
PBT-QF30<
AS-64319-001
SD-98993-008
PBT-GF20
PBT-GF20 CONNECTOR
PBT-GF20 2.2
PBT-GF30
PBT-QF30
pbtgf20
PBT-GF-20
molex CT Connector
SD-64320-001
SD-98993-008
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