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    Kyocera AVX Components 100B100JW500XT1K

    CAP CER 10PF 500V P90 1111
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    DigiKey 100B100JW500XT1K Digi-Reel 1,785 1
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    100B100JW500XT1K Cut Tape 1,785 1
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    100B100JW500XT1K Reel 1,500 500
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    Avnet Americas 100B100JW500XT1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100B100JW500XT1K
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    Richardson RFPD 100B100JW500XT1K 1,000
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    Kyocera AVX Components 100B100JW500XC100

    MLC A/B/R - Waffle Pack (Alt: 100B100JW500XC100)
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    Mouser Electronics 100B100JW500XC100
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    Richardson RFPD 100B100JW500XC100 8 200
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    Kyocera AVX Components 100B100JW500XT

    1111 | SMD Chip | 500 VDC | P90 | 10pF | 5% | SnPb | T&R 7in (180mm) - Custom Tape W/Leader (Alt: 100B100JW500XT)
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    Avnet Americas 100B100JW500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B100JW500XT 1,971
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    TTI 100B100JW500XT Reel 500 500
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    Richardson RFPD 100B100JW500XT 500
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    Kyocera AVX Components 100B100JW500XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B100JW500XTV)
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    Avnet Americas 100B100JW500XTV Tape w/Leader 16 Weeks 500
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    Kyocera AVX Components 100B100JW500XTV1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    100B100JW500X Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B100JW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 500V P90 1111 Original PDF
    100B100JW500XT1K American Technical Ceramics Ceramic Capacitor 10PF 500V P90 1111 Original PDF

    100B100JW500X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 DS03-202RFPP mosfet 1412 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP) PDF

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A PDF

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500 PDF

    C20 CT

    Abstract: 100B220 sprague CT series
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series PDF

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131 PDF

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR18090E Characteristic10-12, DS04-033RFPP DS02-326RFPP) PDF

    Johanson Technology

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology PDF

    926 sprague

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague PDF

    RF POWER MOSFET

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		AGR21125E AGR21125EU AGR21125EF AG210-12, DS04-108RFPP DS04-038RFPP) RF POWER MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP) PDF

    18-12 049 transistor

    Abstract: Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR
    Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR18090E AGR18090E amplR21090U AGR18090EF AGR18090F M-AGR21090F 12-digit 18-12 049 transistor Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR PDF

    J182 transistor

    Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR18090E AGR18090E DS04-157RFPP DS04-104RFPP) J182 transistor "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090EU C1812C105K5RACTR JESD22-C101A PDF

    equivalent transistor PT 3500

    Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 DS04-161RFPP DS04-035RFPP) equivalent transistor PT 3500 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A PDF

    C15B material sheet

    Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-166RFPP DS04-108RFPP) C15B material sheet C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS03-059RFPP DS03-011RFPP) PDF

    J083

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS03-011RFPP DS02-221RFPP) J083 PDF

    100B100JW500X

    Abstract: AGR21125E AGR21125EF AGR21125EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-038RFPP DS03-037RFPP) 100B100JW500X AGR21125EF AGR21125EU JESD22-C101A PDF

    100B100JW500X

    Abstract: AGR09070EF JESD22-C101A 100B100JW500
    Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500 PDF

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al PDF

    AGR18090EF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR18090E AGR18090EF PDF

    100B100JW500X

    Abstract: No abstract text available
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X PDF