mosfet 1412
Abstract: No abstract text available
Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
DS03-202RFPP
mosfet 1412
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-007RFPP
DS03-059RFPP)
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100B100JW500X
Abstract: AGR09090EF JESD22-C101A
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
AGR09090EF
DS04-058RFPP
DS04-029RFPP)
100B100JW500X
JESD22-C101A
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125EU
AGR21125EF
AGR21125End
sm 4500
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C20 CT
Abstract: 100B220 sprague CT series
Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-057RFPP
DS04-027RFPP)
C20 CT
100B220
sprague CT series
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TRANSISTOR tl131
Abstract: No abstract text available
Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include
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PTFB211501E
PTFB211501F
PTFB211501E
PTFB211501F
150-watt,
H-36248-2
H-37248-2
TRANSISTOR tl131
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless
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AGR21125E
AGR21125EU
AGR21125EF
DS03-037RFPP
DS03-012RFPP)
sm 4500
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
DS04-134RFPP
DS04-068RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
Characteristic10-12,
DS04-033RFPP
DS02-326RFPP)
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Johanson Technology
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
DS04-029RFPP
DS04-005RFPP)
Johanson Technology
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926 sprague
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-057RFPP
DS04-027RFPP)
926 sprague
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RF POWER MOSFET
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125EU
AGR21125EF
AG210-12,
DS04-108RFPP
DS04-038RFPP)
RF POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-027RFPP
DS04-007RFPP)
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18-12 049 transistor
Abstract: Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR
Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
AGR18090E
amplR21090U
AGR18090EF
AGR18090F
M-AGR21090F
12-digit
18-12 049 transistor
Transistor J182
TRANSISTOR Z10
100B100JW500X
AGR18090EF
AGR18090EU
C1812C105K5RACTR
JESD22-A114
RF POWER TRANSISTOR
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J182 transistor
Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
AGR18090E
DS04-157RFPP
DS04-104RFPP)
J182 transistor
"RF Power Amplifier"
AGR18090EF
100B100JW500X
AGR18090EU
C1812C105K5RACTR
JESD22-C101A
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equivalent transistor PT 3500
Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19125E
Hz--1990
AGR19125E
AGR19125EU
AGR19125EF
IS-95
DS04-161RFPP
DS04-035RFPP)
equivalent transistor PT 3500
100B100JW500X
AGR19125EF
AGR19125EU
JESD22-C101A
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C15B material sheet
Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125E
AGR21125EU
AGR21125EF
DS04-166RFPP
DS04-108RFPP)
C15B material sheet
C14A
AGR21125EF
AGR21125EU
C10A
C11A
C12A
C12D
JESD22-C101A
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS03-059RFPP
DS03-011RFPP)
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J083
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS03-011RFPP
DS02-221RFPP)
J083
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100B100JW500X
Abstract: AGR21125E AGR21125EF AGR21125EU JESD22-C101A
Text: Preliminary Data Sheet November 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless
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AGR21125E
AGR21125E
AGR21125EU
AGR21125EF
DS04-038RFPP
DS03-037RFPP)
100B100JW500X
AGR21125EF
AGR21125EU
JESD22-C101A
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100B100JW500X
Abstract: AGR09070EF JESD22-C101A 100B100JW500
Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-151RFPP
DS04-057RFPP)
100B100JW500X
JESD22-C101A
100B100JW500
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AGR09090EF
Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
AGR09090EF
DS04-153RFPP
DS04-134RFPP)
JESD22-C101A
ZX18
grm40x7r103k100al
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AGR18090EF
Abstract: No abstract text available
Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
AGR18090EF
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100B100JW500X
Abstract: No abstract text available
Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
Hz--895
DS04-134RFPP
DS04-068RFPP)
100B100JW500X
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