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    Kyocera AVX Components 100B470JW500XT1K

    CAP CER 47PF 500V P90 1111
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    DigiKey 100B470JW500XT1K Reel 500 500
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    100B470JW500XT1K Cut Tape 434 1
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    100B470JW500XT1K Digi-Reel 1
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    Mouser Electronics 100B470JW500XT1K
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    Richardson RFPD 100B470JW500XT1K 1,000
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    Kyocera AVX Components 100B470JW500XT

    Silicon RF Capacitors / Thin Film 500volts 47pF 5%
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    Mouser Electronics 100B470JW500XT 674
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    TTI 100B470JW500XT Reel 500
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    Richardson RFPD 100B470JW500XT 500
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    Kyocera AVX Components 100B470JW500XC100

    Silicon RF Capacitors / Thin Film 47PF 500V 5% 1111
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    Mouser Electronics 100B470JW500XC100
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    TTI 100B470JW500XC100 WAFL 100
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    Richardson RFPD 100B470JW500XC100 500 200
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    Kyocera AVX Components 100B470JW500XTV1K

    Silicon RF Capacitors / Thin Film 500V 47pF Tol 5% Las Mkg Vertical
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    Mouser Electronics 100B470JW500XTV1K
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    Kyocera AVX Components 100B470JW500XTV

    Silicon RF Capacitors / Thin Film 500V 47pF Tol 5% Las Mkg Vertical
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    Mouser Electronics 100B470JW500XTV
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    100B470JW500X Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B470JW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 47PF 500V P90 1111 Original PDF
    100B470JW500XT1K American Technical Ceramics Ceramic Capacitor 47PF 500V P90 1111 Original PDF

    100B470JW500X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS03-202RFPP mosfet 1412

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A

    C20 CT

    Abstract: 100B220 sprague CT series
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)

    Johanson Technology

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology

    926 sprague

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS03-059RFPP DS03-011RFPP)

    J083

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS03-011RFPP DS02-221RFPP) J083

    TB185

    Abstract: No abstract text available
    Text: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W


    Original     		PDF TB185 290-320MHz 28Vdc LR301 TB185 28Vdc, 300Mhz 100B130JW500X

    100B100JW500X

    Abstract: AGR09070EF JESD22-C101A 100B100JW500
    Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al

    100B100JW500X

    Abstract: No abstract text available
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP)

    j0947

    Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X

    100B100JW500X

    Abstract: AGR09070EF JESD22-C101A grm40x7r103k100al
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF perform26 100B100JW500X JESD22-C101A grm40x7r103k100al

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 T210-12, DS04-005RFPP DS03-202RFPP)