FPD200
Abstract: MIL-HDBK-263 400x400
Text: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE
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FPD200
FPD200is
FPD200
MIL-HDBK-263
400x400
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FPD200P70
Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
26GHz
FPD200P70
J-STD-020C,
transistor marking code 1325
RO29
"IPC 1752" gold
L130
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b 857 W3
Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
b 857 W3
transistor marking code 1325
18GHZ
TL11
TL22
VG07
filtronic Solid State
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fpd200p70
Abstract: No abstract text available
Text: PRELIMINARY • FPD200P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 26 GHz
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FPD200P70
FPD200P70
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FPD200
Abstract: FPD200 DIE
Text: FPD200 GENERAL PURPOSE PHEMT DIE Datasheet v2.1 FEATURES: • • • • • LAYOUT: 19 dBm Output Power P1dB 12 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:
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FPD200
FPD200
22A114.
MIL-STD-1686
MIL-HDBK-263.
FPD200 DIE
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EV-SP-000044-001
Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
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FPD2000AS
33dBm
46dBm
FPD2000AS
85GHz)
EB2000AS-AA
DS100125
EV-SP-000044-001
FPD200
CB100
FPD20
RO4003
cw 7687
A114 es
IPC 9701
W2020
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FPD200P70
Abstract: b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State
Text: FPD200P70 Data sheet v3.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
J-STD-020C,
b 857 W3
18GHZ
TL11
TL22
"IPC 1752" gold
DSA002486
filtronic Solid State
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Untitled
Abstract: No abstract text available
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
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FPD200P70
Abstract: TL11 TL22 l420 FPD200P70SR
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
20dBm
26GHz
15GHz
FPD200P70-AJ
TL11
TL22
l420
FPD200P70SR
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FPD200
Abstract: MIL-HDBK-263
Text: FPD200 Datasheet v3.0 GENERAL PURPOSE PHEMT DIE LAYOUT: FEATURES: • • • • • 19 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:
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FPD200
FPD200
MIL-HDBK-263
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fpd2000as
Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized
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FPD2000AS
FPD2000AS
33dBm
46dBm
85GHz)
EB2000AS-AA
14GHz)
EB2000AS-AD
EB2000AS-AG
FPD200
CB100
FPD20
RO4003
InP HBT transistor low noise
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FPD200
Abstract: No abstract text available
Text: FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The
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FPD200
28GHz
25GHz
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A114
Abstract: A115 FPD2000V JESD22 Au Sn eutectic
Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V
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FPD2000V
FPD2000V
A114
A115
JESD22
Au Sn eutectic
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FPD200 DIE
Abstract: No abstract text available
Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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FPD200
FPD200General
FPD200
mx200Î
19dBm
12GHz
18GHz
FPD200-000
DS090519
FPD200 DIE
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transistor A114
Abstract: transistor a114 diagram A114 transistor transistor a115
Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V
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FPD2000V
FPD2000V
transistor A114
transistor a114 diagram
A114 transistor
transistor a115
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FPD200P70
Abstract: No abstract text available
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
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fpd200p70
Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
w65 transistor
FPD200P70SR
TL11
TL22
"IPC 1752" gold
8GH transistor
L30 type RF microwave power transistor
FPD200P70SB
3400 transistor
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transistor marking code 1325
Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
J-STD-020C,
transistor marking code 1325
vp 3082
EV-SP-000044-001
MARKING W1 AD
PHEMT marking code a
ipc 9701
filtronic Solid State
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FPD200
Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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FPD200
FPD200General
FPD200
25mx200m
19dBm
12GHz
18GHz
FPD200-000
DS090519
FPD200 DIE
MIL-HDBK-263
bjt 137
FPD200-000
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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transistor marking code 1325
Abstract: FPD2000AS filtronic Solid State
Text: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
J-STD-020C,
transistor marking code 1325
filtronic Solid State
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Bluetooth Energy Meter ckt diagram
Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3
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FD501
FD504
FD502
FD503
Bluetooth Energy Meter ckt diagram
94vo r29
Batteries Varta 500 rst 124
Touch pad synaptics
Realistic sa-150
rotary encoder EC11
VT82C694X
UB133X01
ALC200
humidity temperature sensor sh11
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via vt8237 user manual
Abstract: VIA vt8237 FWH32 VT8237 K8N800 L570J schematic diagram lcd tv tuner box H22-J22 AMD Athlon 64 X2 vdd gnd VT1631l
Text: Preface LCD Computer L570J Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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L570J
CM-4M3216-181JT
FBM3216HS800
100U/10V
CM-4M3216-181JT
ACES-87151-1001
C276D103
C276D106
ACES-85201-0405
via vt8237 user manual
VIA vt8237
FWH32
VT8237
K8N800
schematic diagram lcd tv tuner box
H22-J22
AMD Athlon 64 X2 vdd gnd
VT1631l
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VT1634AL
Abstract: tf041-th-pcb via vt1634al PCT303W PCT303A ad7 l59 16pin soic MITAC schematic 39-XI amilo schematic W83L950
Text: SERVICE MANUAL FOR 8650 BY: Sanny.Gao Repair Technology Research Department /EDVD November. 2005/R01 8650 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 4 1.1 Introduction …………………………………………………………………………………………………………… 4
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2005/R01
PN800
VT8235CE
W83L950D
VT1634AL
tf041-th-pcb
via vt1634al
PCT303W
PCT303A
ad7 l59 16pin soic
MITAC schematic
39-XI
amilo schematic
W83L950
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