FPD200P70
Abstract: TL11 TL22 l420 FPD200P70SR
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
20dBm
26GHz
15GHz
FPD200P70-AJ
TL11
TL22
l420
FPD200P70SR
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FPD200P70
Abstract: No abstract text available
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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Original
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PDF
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
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fpd200p70
Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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Original
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PDF
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
w65 transistor
FPD200P70SR
TL11
TL22
"IPC 1752" gold
8GH transistor
L30 type RF microwave power transistor
FPD200P70SB
3400 transistor
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