FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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Untitled
Abstract: No abstract text available
Text: FLK012XP p| .Ç?TÇ|. GaAs FET and HEMT Chips rUJIlMJ FEATURES • H igh O u tp u t P ow er: P-|<jB = 2 0 .5 d B m T yp . • H igh G ain: G -j^ B = 8.0d B (T yp .) • H igh PAE: r i add = 26 % (T yp .) • P roven R elia b ility DESCRIPTION T h e F L K 0 1 2 X P c h ip is a p o w e r G aA s F E T th a t is d e sig n e d fo r
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FLK012XP
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FLK012
Abstract: FLK012XP
Text: FLK012XP c?„. G a A s F E T a n d H E M T Chips r U J IlM J FEATURES • • • • High Output Power: P-|dB = 20.5dBm Typ. High Gain: G-j^B = 8.0dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability DESCRIPTION The FLK012XP chip is a power GaAs FET that is designed for
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FLK012XP
FLK012XP
FLK012
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et 1103
Abstract: FLK012XP
Text: FLK012XP Ga A s F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -5 - - V 19.5 20.5 - dBm 7.0 8.0 - dB - 26 - % - 2.5 - dB 7 - dB 11
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FLK012XP
12GHz
et 1103
FLK012XP
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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FLC081XP
FLC151XP
FLC301XP
FSX017X
FSX51X
FSX52X
FLX252XV
FLK012XP
FLK022XV*
FLK052XV
FLC301XP
fsx52
FUJITSU MICROWAVE
XP 215
FLK202
FSX51
FLC151
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FLC081XP
Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A
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FHX05X
FHX06FA/LG
FHX06X
FHX15FAAG
FHX35LG
27dBin
FLC253MH-8
FLC301MG-8
FLC311MG-4
FLK012WF
FLC081XP
FLC253MH-6
FLC091WF
FLC053WG
FLC103WG
FLK022WG
FLK012WF
FLK052WG
FHX15FA
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