Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EPA080A Search Results

    SF Impression Pixel

    EPA080A Price and Stock

    Others EPA080A

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange EPA080A 1,696
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    EPA080A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA080A Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA080A-100F Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA080A-70 Excelics Semiconductor 5-8V high efficiency heterojunction power FET Original PDF
    EPA080AV Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF

    EPA080A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EPA080A

    Abstract: No abstract text available
    Text: Excelics EPA080A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 510 +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EPA080A 18GHz 12GHz EPA080A

    EPA080A-70

    Abstract: 744 773 047
    Text: Excelics EPA080A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +25.5dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA080A-70 70mil 12GHz EPA080A-70 744 773 047

    EPA080A-100F

    Abstract: No abstract text available
    Text: EPA080A-100F High Efficiency Heterojunction Power FET ISSUED 08/10/2005 .070 FEATURES • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +27.5dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EPA080A-100F 100mil 12GHz EPA080A-100F

    EPA080A

    Abstract: THICKNESS-75 900-131 EPA080AV
    Text: Excelics EPA080A/EPA080AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA080A AND 10.5dB FOR EPA080AV AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA080A/EPA080AV EPA080A EPA080AV 18GHz EPA080A 12GHz 18GHz EPA080AV. THICKNESS-75 900-131

    EPA080A-100F

    Abstract: No abstract text available
    Text: Excelics EPA080A-100F DATA SHEET High Efficiency Heterojunction Power FET ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS  7<3  All Dimensions In mils TYP Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss


    Original     		PDF EPA080A-100F 12GHz EPA080A-100F

    EPA025A70

    Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
    Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB


    Original     		PDF RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A

    900-131

    Abstract: EPA080A EPA080AV
    Text: EPA080A/EPA080AV High Efficiency Heterojunction Power FET • • • • • +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA080A AND 10.5dB FOR EPA080AV AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EPA080A/EPA080AV EPA080A EPA080AV 18GHz EPA080A EPA080AV 12GHz 900-131

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EFA018A

    Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
    Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20


    Original     		PDF EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C

    EMA302B

    Abstract: EPA080A EPA160A
    Text: Excelics EMA302B PRELIMINARY DATA SHEET 22-26 GHz Medium Power MMIC 85 165 50 165 Operating Frequency Range 1020 F PARAMETERS/TEST CONDITIONS 325 425 50 95 900 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS1 Ta = 25 OC


    Original     		PDF EMA302B EMA302B EPA080A EPA160A