EFA040A-70
Abstract: PT 1132
Text: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA040A-70
70mil
12GHz
18GHz
EFA040A-70
PT 1132
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EFA040A
Abstract: No abstract text available
Text: EFA040A Low Distortion GaAs Power FET FEATURES 350 50 • • • • • • +23.0dBm TYPICAL OUTPUT POWER 10.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,
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EFA040A
12GHz
18GHz
EFA040A
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12GHz
Abstract: EFA040A
Text: Excelics EFA040A DATA SHEET Low Distortion GaAs Power FET • • • • • • +23.0dBm TYPICAL OUTPUT POWER 10.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,
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EFA040A
12GHz
18GHz
12GHz
EFA040A
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EFA040A
Abstract: EFA040A-100P 100MIL
Text: EFA040A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +23.0dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EFA040A-100P
100MIL
12GHz
18GHz
EFA040A
EFA040A-100P
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EFA018A
00E-12
40E-14
00E-08
63E-13
80E-14
00E-14
EFA025A
Curtice
EFA018A
EPA030A
EPA480C
EPA060B
EFA040A
EFA025A
EPA025
220E-12
Excelics EPA018A
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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EPA018A
EPA025A
EPA030C
EPA040A
EPA060A
EFA480B
EFA480C
EFA720A
EFA960B
EFA1200A
EPA018A
EPA060B
EFA018A
Excelics EPA018A
EPA480C
EPA025A
EPA040A
EPA060A
EPA240D
EPA030C
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