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    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    Curtice

    Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
    Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the


    Original     		PDF AN1023 sam13-106. Curtice fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice

    ATF-54143-TR1G

    Abstract: l0746 A004R ATF-54143 C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


    Original     		PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT-343 OT343 SC-70) AV01-0620EN AV02-0488EN ATF-54143-TR1G l0746 A004R C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w

    ATF-54143 application notes

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a mobile


    Original     		PDF ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier

    ATF54143.s2p

    Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
    Text: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency


    Original     		PDF ATF-54143 MTT-28, ATF-54143 5989-0852EN ATF54143.s2p 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF54143 atf54143 pHEMT AN-1222 BCV62C

    ATF-54143 application notes

    Abstract: ATF54143.s2p ATF-54143 atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads
    Text: A 802.11a WLAN Driver Amplifier using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor Application Note 1286 Introduction Device Selection The driver amplifiers described in this application note are for use in applications covering 5.0 GHz to 5.8 GHz. This frequency range


    Original     		PDF ATF-54143 5988-5845EN ECEN4228 ATF-54143 ATF-54143 application notes ATF54143.s2p atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads

    ATF-531P8

    Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
    Text: Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a


    Original     		PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89

    agilent pHEMT transistor

    Abstract: transistor C715 ATF-531P8 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


    Original     		PDF ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    lna 2.5 GHZ s parameter ads design

    Abstract: 5Ghz lna transistor Curtice ATF-55143 ATF-54143 ATF55143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with


    Original     		PDF ATF-55143 ATF55143 o8675 5988-5846EN ECEN4228 ATF-551M4 lna 2.5 GHZ s parameter ads design 5Ghz lna transistor Curtice ATF-54143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    marking r4 SOT343

    Abstract: a 1458 ATF54143 L6 sot 665 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


    Original     		PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT343 SC-70) AV01-0620EN AV02-0488EN marking r4 SOT343 a 1458 L6 sot 665 l0746

    ATF-55143

    Abstract: ECEN4228 ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with multilayer 0.031 inch thickness FR-4 printed circuit board


    Original     		PDF ATF-55143 MTT-28, ECEN4228 ATF-551M4 5988-5846EN ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285

    Anaren Microwave

    Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
    Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been


    Original     		PDF

    b1415

    Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
    Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs


    Original     		PDF RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89

    agilent pHEMT transistor

    Abstract: Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-55143 ATF-551M4 advanced design system
    Text: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


    Original     		PDF ATF-55143 ATF-55143 5988-9555EN agilent pHEMT transistor Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-551M4 advanced design system

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    TDMA simulation ADS

    Abstract: ATF-50189 BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305
    Text: ATF-50189 High Linearity 900 MHz Amplifier Avago Technologies Enhancement Mode Psuedomorphic HEMT in SOT 89 Package Application Note 5293 Introduction Application Guidlines Avago Technologies ATF-50189 is an enhancement mode PHEMT designed for high linearity and medium


    Original     		PDF ATF-50189 800MHz 900MHz 2400MHz 900MHz AV01-0365EN TDMA simulation ADS BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305

    ATF-54143 application notes

    Abstract: Curtice PHEMT marking code a SOT c5 87 transistor C013 transistor 4F LNA RHO marking transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


    Original     		PDF ATF-54143 OT-343 SC-70) 5988-2722EN 5988-6275EN ATF-54143 application notes Curtice PHEMT marking code a SOT c5 87 transistor C013 transistor 4F LNA RHO marking transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1

    l0746

    Abstract: Transistor TT 2246 marking 4F sot-343 RD40 ATF54143 R11450 transistor c011 LNA MARKING 4F
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


    Original     		PDF ATF-54143 SC-70 OT-343) OT-343 SC-70) 5988-0450EN l0746 Transistor TT 2246 marking 4F sot-343 RD40 ATF54143 R11450 transistor c011 LNA MARKING 4F

    transistor C715

    Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet
    Text: ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


    Original     		PDF ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet

    LNA MARKING 4F

    Abstract: Curtice A004R ATF-54143 atf-54143-blkg MW725 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


    Original     		PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT-343 OT343 SC-70) AV01-0620EN AV02-0488EN LNA MARKING 4F Curtice A004R atf-54143-blkg MW725 l0746

    L-07C1N8ST

    Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
    Text: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure


    Original     		PDF ATF-55143 ATF-55143 AV01-0376EN L-07C1N8ST atf55143 fet curtice nonlinear model sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T

    ATF-54143 application notes

    Abstract: transistor 4F LNA Curtice ATF-54143 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 sot-343 as marking R5 sc-70
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


    Original     		PDF ATF-54143 OT-343 SC-70) Descripti57 5988-6275EN 5988-8408EN ATF-54143 application notes transistor 4F LNA Curtice ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 sot-343 as marking R5 sc-70

    C882 TRANSISTOR

    Abstract: ATF-531P8 Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers
    Text: ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB


    Original     		PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN C882 TRANSISTOR Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers

    JD 1803

    Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
    Text: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL


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