EMA112-CP083
Abstract: No abstract text available
Text: EMA112-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 11/27/2006 Features • • • • 0.5 – 3.0 Ghz Bandwidth 28.0dBm Typical Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain Single Bias Supply Caution! ESD sensitive device.
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EMA112-CP083
10MHz,
18dBm
EMA112-CP083
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EPA960CR-CP083
Abstract: No abstract text available
Text: EPA960CR-CP083 High Efficiency Heterojunction Power FET UPDATED 01/16/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT
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EPA960CR-CP083
160MIL
4x9600
960CR
EPA960CR-CP083
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igd 001
Abstract: EFA240D-CP083
Text: EFA240D-CP083 Low Distortion GaAs Power FET UPDATED 06/13/2006 .096 .290±0.005 FEATURES • • • • • • 2X .065 ±.015 NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +30.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE
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EFA240D-CP083
160MIL
5x2400
175oC
-65/175oC
igd 001
EFA240D-CP083
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EPA480C-CP083
Abstract: No abstract text available
Text: Excelics EPA480C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED
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EPA480C-CP083
160MIL
Idss25
EPA480C-CP083
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EPA120D-CP083
Abstract: No abstract text available
Text: EPA120D-CP083 High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT
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EPA120D-CP083
160MIL
5x1200
175oC
-65/175oC
EPA120D-CP083
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EPA960C-CP083
Abstract: No abstract text available
Text: Excelics EPA960C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +38.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 9600 MICRON RECESSED
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EPA960C-CP083
160MIL
EPA960C-CP083
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EFA480C-CP083
Abstract: No abstract text available
Text: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480C-CP083
160MIL
EFA480C-CP083
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EFA720AV-CP083
Abstract: No abstract text available
Text: EFA720AV-CP083 Low Distortion GaAs Power FET UPDATED 01/30/2006 FEATURES ● EFA • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE
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EFA720AV-CP083
160MIL
5x4800
720AV
175oC
-65/175oC
EFA720AV-CP083
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Untitled
Abstract: No abstract text available
Text: EMA110-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 01/10/2007 Features • • • • 0.5 – 3.0 Ghz Bandwidth 26.5dBm Typical Output Power at 1dB Compression 11.0 dB Typical Small Signal Gain Single Bias Supply EMA 110 Caution! ESD sensitive device.
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EMA110-CP083
10MHz,
17dBm
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EFA960CR-CP083
Abstract: No abstract text available
Text: EFA960CR-CP083 Low Distortion GaAs Power FET UPDATED 05/19/2006 FEATURES • • • • • • 2X .065 ±.015 P1dB G1dB PAE .160 .010 MAX .075 .220 .200 .050 .008±0.001 All Dimensions in Inches Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C
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EFA960CR-CP083
160MIL
5x9600
EFA960CR-CP083
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EFA480C-CP083
Abstract: fet 721
Text: EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION 16.0 dB GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480C-CP083
160MIL
5x4800
EFA480C-CP083
fet 721
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EFA960CR-CP083
Abstract: VP 1176
Text: EFA960CR-CP083 Low Distortion GaAs Power FET UPDATED 05/19/2006 FEATURES • • • • • • 2X .065 ±.015 P1dB G1dB PAE .160 .010 MAX .075 .220 .200 .050 .008±0.001 All Dimensions in Inches Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C
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EFA960CR-CP083
160MIL
5x9600
EFA960CR-CP083
VP 1176
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igd 001
Abstract: EPA240D-CP083
Text: EPA240D-CP083 High Efficiency Heterojunction Power FET UPDATED 07/19/2006 • • • • • • .096 .290±0.005 FEATURES NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +32.5 dBm OUTPUT POWER AT 1dB COMPRESSION 18.5 dB GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE
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EPA240D-CP083
160MIL
5x2400
175oC
-65/175oC
igd 001
EPA240D-CP083
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EFA960C-CP083
Abstract: No abstract text available
Text: Excelics EFA960C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +36.0dBm TYPICAL OUTPUT POWER 15.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE
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EFA960C-CP083
160MIL
EFA960C-CP083
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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CP083
Abstract: No abstract text available
Text: EXCELICS SEMICONDUCTOR, INC. Packaged FET Equivalent Circuit Model Shown below is an approximate model for use with packaged FETs. The FET shown in the schematic can be replaced with the small signal or large signal model for the chip, including bond wire inductances. The element values shown
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OT-89
CP083
CP083
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