Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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M36DR432AD
Abstract: M36DR432BD
Text: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM
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M36DR432AD
M36DR432BD
256Kb
100ns,
120ns
0020h
LFBGA66
M36DR432AD:
00A0h
M36DR432AD
M36DR432BD
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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W3E32M72SR-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Reduced part count Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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W3E32M72SR-XSBX
32Mx72
266Mb/s
E32M72SR-XSBX
W3E32M72SR-XSBX
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W3E16M72S-XBX
Abstract: W3E32M72S-XBX
Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply
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W3E16M72S-XBX
16Mx72
W3E16M72S-XBX
W3E32M72S-XBX
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of
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WEDPN16M72V-XBX
16Mx72
128MByte
864-bit
100MHz,
125MHz
100MHz
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M72V-XBX
4Mx72
125MHz
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M72V-XBX
8Mx72
125MHz
WEDPN8M72V-XBX
64MByte
512Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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WEDPN8M72VR-XBX
8Mx72
WEDPN8M72VR-XBX
64MByte
512Mb)
100MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN16M72V-XBX
16Mx72
125MHz
128MByte
864-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72V-XBX 16Mx72 Synchronous DR AM DRAM Preliminary* FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM
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WEDPN16M72V-XBX
16Mx72
125MHz
128MByte
864bit
100MHz
125MHz
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WEDPN4M72V-XBX
Abstract: No abstract text available
Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz,
WEDPN4M72V-XBX
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Untitled
Abstract: No abstract text available
Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply
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L9D112G80BG4
LDS-L9D112G80BG4-A
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Untitled
Abstract: No abstract text available
Text: M59DR032EA M59DR032EB 32 Mbit 2Mb x 16, Dual Bank, Page 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read Figure 1. Packages – VPP = 12V for fast Program (optional)
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M59DR032EA
M59DR032EB
100ns
TFBGA48
7x12mm
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88CAh
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
A0-A21
88CAh
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Untitled
Abstract: No abstract text available
Text: M58CR032C M58CR032D 32 Mbit 2Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA
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M58CR032C
M58CR032D
54MHz
100ns
TFBGA56
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Untitled
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
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Untitled
Abstract: No abstract text available
Text: SIEMENS Ternary PIN Photodiode in TO-Package, Central Pin • • • • • • • • • • • • InGaAs/lnP - PIN-photodiode Designed for application in fiber-optic communication systems Sensitive receiver for the 2nd and 3rd optical window 1300nm and 1500nm
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1300nm
1500nm)
00231Z
062702-Pxxxx
23SLG5
DQ737SD
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Untitled
Abstract: No abstract text available
Text: / = 7 S C S -1 H M S 0 N * j M, MtEGämi^lMltEg STV0180 HIGH SPEED 8-BIT ADC ADVANCE DATA • 8 BIT RESOLUTION ■ SAMPLINGRATE U P T030M H z ■ BINARY OR 2’s COMPLEMENT TRISTATE OUTPUTS ■ OVERFLOW/UNDERFLOW TRISTATE OUT PUTS ■ TTL-COMPATIBLE DIGITAL OUTPUTS
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STV0180
T030M
STV0180
Q0737c
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