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STMicroelectronics M58CR064C90ZB6T INSTOCK
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M58CR064C Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M58CR064C		STMicroelectronics	64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY F		Original	PDF
M58CR064C		STMicroelectronics	64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY		Original	PDF
M58CR064C100ZB6T		STMicroelectronics	64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory		Original	PDF
M58CR064C10ZB6T		STMicroelectronics	64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory		Original	PDF
M58CR064C120ZB6T		STMicroelectronics	64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory		Original	PDF
M58CR064C12ZB6T		STMicroelectronics	64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory		Original	PDF
M58CR064C85ZB6T		STMicroelectronics	64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory		Original	PDF
M58CR064C90ZB6T		STMicroelectronics	64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory		Original	PDF
M58CR064CZB		STMicroelectronics	64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory		Original	PDF

M58CR064C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56	PDF
88CAh Abstract: No abstract text available Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA	Original	M58CR064C M58CR064D 54MHz 100ns TFBGA56 A0-A21 88CAh	PDF
Untitled Abstract: No abstract text available Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA	Original	M58CR064C M58CR064D 54MHz 100ns TFBGA56	PDF
8802H Abstract: No abstract text available Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers	Original	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz TFBGA56 8802H	PDF
Untitled Abstract: No abstract text available Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56	PDF
A0-A21 Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56 Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers	Original	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 A0-A21 CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56	PDF
88-CB Abstract: No abstract text available Text: M58CR064C M58CR064D 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	M58CR064C M58CR064D 54MHz TFBGA56 88-CB	PDF
M58CR064C Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56 Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 M58CR064C A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56	PDF
TA247 Abstract: M58CR064C M58CR064D TFBGA56 Text: TA247 TECHNICAL ARTICLE ST challenges 3G Mobile Communications: High-speed 64 Mbit Low Voltage Flash Memory . Marco Redaelli, STMicroelectronics, Agrate, Italy Future third generation mobile communications will support high-speed multimedia data transfers	Original	TA247 M58CR064 TA247 M58CR064C M58CR064D TFBGA56	PDF
QRMM0010 Abstract: No abstract text available Text: QRMM0010 QUALIFICATION REPORT M36DR864CB/DB: 64 Mbit x16, Burst Flash Memory and 8 Mbit (x16) SRAM, 1.8V Multiple Memory Product INTRODUCTION The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM components have separate power supplies and grounds and are distinguished by three chip enable inputs.	Original	QRMM0010 M36DR864CB/DB: M36DR864CB/DB M58CR064C/D QRMM0010	PDF
AN1655 Abstract: C1655C M58CR032C M58CR032D M58CR064C M58CR064D M58CR064P M58CR064Q Text: AN1655 APPLICATION NOTE Software Drivers for the M58CR032 and M58CR064 Flash Memories CONTENTS • M58CR032 and M58CR064 PROGRAMMING MODEL – Bus Operations Commands and ■ STATUS REGISTER ■ A DETAILED EXAMPLE ■ HOW TO USE THE SOFTWARE DRIVER – General Considerations	Original	AN1655 M58CR032 M58CR064 M58CR032C, M58CR032D, M58CR064C, M58CR064D, M58CR064P AN1655 C1655C M58CR032C M58CR032D M58CR064C M58CR064D M58CR064Q	PDF