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    DMOS Search Results

    DMOS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TLC59210IN Texas Instruments 8-Bit DMOS Sink Driver With Latch 20-PDIP -40 to 85 Visit Texas Instruments Buy
    LMD18245T/NOPB Texas Instruments 3A, 55V DMOS Full-Bridge Motor Driver 15-TO-220 -40 to 125 Visit Texas Instruments Buy
    TLC59211IN Texas Instruments 8-Bit DMOS Sink Driver 20-PDIP -40 to 85 Visit Texas Instruments Buy
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    DMOS Price and Stock

    Red Lion Controls DMOSCB01

    FUNCTION EVALUATION KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMOSCB01 Box 1
    • 1 $72.27
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    • 100 $72.27
    • 1000 $72.27
    • 10000 $72.27
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    Red Lion Controls DMOSCB02

    MOUNTING P.C. BOARD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMOSCB02 Box
    • 1 -
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    • 10000 -
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    Nexperia BSS84,215

    MOSFETs SOT23 P CHAN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84,215 Reel 726,000 3,000
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    • 10000 $0.0287
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    Nexperia BSS87,115

    MOSFETs SOT89 200V .4A N-CH D-MOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS87,115 Reel 13,000 1,000
    • 1 -
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    • 1000 $0.114
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    IXYS Corporation CPC3701CTR

    MOSFETs N Channel FET 60V, 600mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CPC3701CTR Reel 10,000 1,000
    • 1 -
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    • 1000 $0.335
    • 10000 $0.294
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    Find more DMOS price and stock on Findchips.com

    DMOS Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMOSCB01 Red Lion Controls Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, FUNCTION EVALUATION KIT Original PDF
    DM-OSC-B01/A Red Lion Controls Panel Meters - Accessories, Industrial Controls, Meters, KIT EVALUATION FOR DMOSCB01 Original PDF
    DMOSCB02 Red Lion Controls Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, MOUNTING P.C. BOARD Original PDF
    DM-OSC-B02/A Red Lion Controls Panel Meters - Accessories, Industrial Controls, Meters, BOARD PC MOUNT FOR DMOSCB02 Original PDF
    DM-OSC-B02/A Red Lion Controls BOARD PC MOUNT FOR DMOSCB02 Original PDF
    DM-OSC-B03/A Red Lion Controls Panel Meters - Accessories, Industrial Controls, Meters, BOARD PC SUB-CUB 2 PROTO TYPE Original PDF
    DM-OSC-B04/A Red Lion Controls Panel Meters - Accessories, Industrial Controls, Meters, BOARD PC SUB-CUB-D PROTO TYPE Original PDF

    DMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET

    tb2959

    Abstract: TB2959HQ TB295 TB29 W1002 GV26d toshiba tb2959hq
    Text: TB2959HQ Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2959HQ Maximum Power 47W BTL  4-ch Audio Power IC 1. Description The TB2959HQ is a four-channel BTL power amplifier for car audio applications. This IC has a pure complementary P-ch and N-ch DMOS output


    Original     		PDF TB2959HQ TB2959HQ pin25) tb2959 TB295 TB29 W1002 GV26d toshiba tb2959hq

    Untitled

    Abstract: No abstract text available
    Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


    Original     		PDF TPIC6259 SLIS009A 250-mA

    Untitled

    Abstract: No abstract text available
    Text: TPIC2810 8-BIT LED DRIVER WITH I2C INTERFACE SLIS109A – DECEMBER 2001 – REVISED SEPTEMBER 2002 D Low rDS on . . . 5 Ω Typical D Eight Power DMOS Transistor Outputs of D D D 100-mA Continuous Current 210-mA Current Limit Capability Drain Output ESD Protection . . . 3000 V


    Original     		PDF TPIC2810 SLIS109A 100-mA 210-mA

    Untitled

    Abstract: No abstract text available
    Text: REG104 REG 104 REG 104 SBVS025G – SEPTEMBER 2001 – REVISED SEPTEMBER 2005 DMOS 1A Low-Dropout Regulator FEATURES DESCRIPTION ● NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability ● FAST TRANSIENT RESPONSE


    Original     		PDF REG104 SBVS025G 230mV OT223-5, REG104

    Untitled

    Abstract: No abstract text available
    Text: REG101 REG 101 SBVS026D – JULY 2001 – REVISED SEPTEMBER 2005 DMOS 100mA Low-Dropout Regulator FEATURES DESCRIPTION ● NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability ● FAST TRANSIENT RESPONSE


    Original     		PDF REG101 SBVS026D 100mA OT23-5 REG101

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3453DV 11-Mar-11

    APQ03SN80AB

    Abstract: MOSFET 800V 3A 800VVGS
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS

    sir882a

    Abstract: No abstract text available
    Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR882ADP 11-Mar-11 sir882a

    fqt1n80

    Abstract: No abstract text available
    Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQT1N80TF fqt1n80

    S12-1319

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7820DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-1319

    FDA20

    Abstract: *20N50F
    Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA20N50 FDA20 *20N50F

    Si7625DN

    Abstract: mosfet 4430 si7625 S10-2503
    Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiZ790DT 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1012CR 11-Mar-11

    APQ57SN10BH

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ57SN10BH 00V/57A APQ57SN10BH-XXM0 APQ57SN10BH

    s1124

    Abstract: No abstract text available
    Text: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF Si5999EDU 11-Mar-11 s1124

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS698DN 11-Mar-11

    62630

    Abstract: No abstract text available
    Text: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA920DJ 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62630

    Untitled

    Abstract: No abstract text available
    Text: Atmel U6815BM Dual Hex DMOS Output Driver with Serial Input Control DATASHEET Features ● Six high-side and six low-side drivers ● Outputs freely configurable as switch, half bridge, or H-bridge ● Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors


    Original     		PDF U6815BM

    SIR876

    Abstract: No abstract text available
    Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR876ADP 11-Mar-11 SIR876

    DN2450

    Abstract: Voltage to Current Converters marking L2 package SOT A0208
    Text: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		PDF DN2450 DSFP-DN2450 A020811 DN2450 Voltage to Current Converters marking L2 package SOT A0208

    TPIC6A595NE

    Abstract: tpic6a595 SLIS005B
    Text: TPIC6A595 POWER LOGIC 8ĆBIT SHIFT REGISTER SLIS005B − APRIL 1993 − REVISED MAY 2005 D D D D D D D Low rDS on . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability Devices Are Cascadable


    Original     		PDF TPIC6A595 SLIS005B 350-mA TPIC6A595NE