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    SI7625DN Price and Stock

    Vishay Siliconix SI7625DN-T1-GE3

    MOSFET P-CH 30V 35A PPAK1212-8
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    DigiKey SI7625DN-T1-GE3 Reel 21,000 3,000
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    SI7625DN-T1-GE3 Cut Tape 4,022 1
    • 1 $1.08
    • 10 $0.884
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    SI7625DN-T1-GE3 Digi-Reel 1
    • 1 $1.08
    • 10 $0.884
    • 100 $0.6872
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    New Advantage Corporation SI7625DN-T1-GE3 33,000 1
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    Vishay Intertechnologies SI7625DN-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7625DN-T1-GE3)
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    Avnet Americas SI7625DN-T1-GE3 Reel 3,000 17 Weeks 3,000
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    SI7625DN-T1-GE3 Reel 3,000
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    Mouser Electronics SI7625DN-T1-GE3 73,207
    • 1 $0.87
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    Verical SI7625DN-T1-GE3 6,000 3,000
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    SI7625DN-T1-GE3 3,000 101
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    SI7625DN-T1-GE3 1,728 15
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    Arrow Electronics SI7625DN-T1-GE3 6,000 17 Weeks 3,000
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    SI7625DN-T1-GE3 3,000 17 Weeks 1
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    SI7625DN-T1-GE3 Cut Strips 1,728 19 Weeks 1
    • 1 $0.6242
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    • 100 $0.5073
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    Newark SI7625DN-T1-GE3 Cut Tape 15,552 1
    • 1 $0.92
    • 10 $0.774
    • 100 $0.627
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    SI7625DN-T1-GE3 Cut Tape 3,000
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    SI7625DN-T1-GE3 Reel 3,000
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    TTI SI7625DN-T1-GE3 Reel 30,000 3,000
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    TME SI7625DN-T1-GE3 1
    • 1 $0.98
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    Chip 1 Exchange SI7625DN-T1-GE3 3,188
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    Avnet Asia SI7625DN-T1-GE3 21 Weeks 3,000
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    Chip1Stop SI7625DN-T1-GE3 6,000
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    SI7625DN-T1-GE3 1,728
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    Component Electronics, Inc SI7625DN-T1-GE3 323
    • 1 $7.69
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    EBV Elektronik SI7625DN-T1-GE3 19 Weeks 3,000
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    Vishay Intertechnologies SI7625DN-T1-GE3.

    Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:52W Rohs Compliant: Yes |Vishay SI7625DN-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI7625DN-T1-GE3. Reel 6,000 3,000
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    SI7625DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7625DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 1212-8 PPAK Original PDF

    SI7625DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7625DN

    Abstract: mosfet 4430 si7625 S10-2503
    Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7625DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7625DN

    Abstract: 1055 AN609 si7625
    Text: Si7625DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7625DN AN609, 02-Mar-10 1055 AN609 si7625

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7625DN

    Abstract: S10-0638-Rev si7625
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08 S10-0638-Rev si7625

    SIS443DN

    Abstract: Si7625DN S12307
    Text: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		PDF SiS443DN Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Si7625DN S12307

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497