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    SI7820DN Price and Stock

    Vishay Siliconix SI7820DN-T1-GE3

    MOSFET N-CH 200V 1.7A PPAK1212-8
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    DigiKey SI7820DN-T1-GE3 Cut Tape 11,729 1
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    SI7820DN-T1-GE3 Digi-Reel 11,729 1
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    SI7820DN-T1-GE3 Reel 6,000 3,000
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    Vishay Siliconix SI7820DN-T1-E3

    MOSFET N-CH 200V 1.7A PPAK1212-8
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    DigiKey SI7820DN-T1-E3 Cut Tape 6,090 1
    • 1 $1.84
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    • 1000 $0.66966
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    SI7820DN-T1-E3 Digi-Reel 6,090 1
    • 1 $1.84
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    SI7820DN-T1-E3 Reel 3,000 3,000
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    ES Components SI7820DN-T1-E3
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    Vishay Intertechnologies SI7820DN-T1-E3

    Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7820DN-T1-E3)
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    Avnet Americas SI7820DN-T1-E3 Reel 3,000 13 Weeks 3,000
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    Mouser Electronics SI7820DN-T1-E3 5,215
    • 1 $1.49
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    • 100 $0.985
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    Newark SI7820DN-T1-E3 Cut Tape 3,000
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    SI7820DN-T1-E3 Reel 3,000
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    Bristol Electronics SI7820DN-T1-E3 7,349
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    TTI SI7820DN-T1-E3 Reel 6,000 3,000
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    EBV Elektronik SI7820DN-T1-E3 14 Weeks 3,000
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    Vishay Intertechnologies SI7820DN-T1-GE3

    Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7820DN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7820DN-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SI7820DN-T1-GE3 22,131
    • 1 $1.33
    • 10 $1.08
    • 100 $0.9
    • 1000 $0.707
    • 10000 $0.701
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    Verical SI7820DN-T1-GE3 2,160 8
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    • 1000 $0.7865
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    Arrow Electronics SI7820DN-T1-GE3 Cut Strips 2,160 13 Weeks 1
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    Newark SI7820DN-T1-GE3 Cut Tape 3,000
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    TTI SI7820DN-T1-GE3 Reel 3,000
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    Chip1Stop SI7820DN-T1-GE3 2,160
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    EBV Elektronik SI7820DN-T1-GE3 14 Weeks 3,000
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    Vishay Intertechnologies SI7820DN-TI-E3

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    Bristol Electronics SI7820DN-TI-E3 743
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    Find more SI7820DN price and stock on Findchips.com

    SI7820DN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7820DN Vishay Siliconix MOSFETs Original PDF
    Si7820DN SPICE Device Model Vishay N-Channel 200-V (D-S) MOSFET Original PDF
    SI7820DN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 1212-8 Original PDF
    Si7820DN-T1-E3 Vishay Telefunken Original PDF
    SI7820DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 1212-8 Original PDF

    SI7820DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S12-1319

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7820DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-1319

    TSOP8

    Abstract: si7401
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP8 si7401

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: REFERENCES FIXED Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies


    Original     		PDF Si7820DN Si7820DN-T1--E3 S-51129--Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7820DN

    Abstract: Si7820DN-T1
    Text: Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies


    Original     		PDF Si7820DN Si7820DN-T1--E3 08-Apr-05 Si7820DN-T1

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200


    Original     		PDF Si7820DN Si7820DN-T1 S-32269--Rev. 03-Nov-03

    Si7820DN

    Abstract: Si7820DN-T1
    Text: Si7820DN Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200


    Original     		PDF Si7820DN Si7820DN-T1--E3 S-32411--Rev. 24-Nov-03 Si7820DN-T1

    SI7820

    Abstract: AN609 Si7820DN 73841
    Text: Si7820DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7820DN AN609 03-Mar-06 SI7820 73841

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7820DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7820DN

    Abstract: Si7820DN-T1-E3 Si7820DN-T1-GE3
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 11-Mar-11

    Si7820DN

    Abstract: Si7820DN SPICE Device Model
    Text: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7820DN S-60245Rev. 20-Feb-06 Si7820DN SPICE Device Model

    Si7820DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7820DN 0-to-10V 30-Nov-03

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies


    Original     		PDF Si7820DN Si7820DN-T1--E3 S-51129--Rev. 13-Jun-05

    Si7820DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7820DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    cs 740 mosfet

    Abstract: No abstract text available
    Text: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features ► 360VPP output voltage for high brightness ► Large output load capability of up to 150nF ► 2.7 to 5.5V operating supply voltage ► Single lithium ion cell compatible ► Adjustable output regulation for dimming


    Original     		PDF 360VPP 150nF 16-Lead HV816 HV816 DSFP-HV816 A120210 cs 740 mosfet

    DIP4NS

    Abstract: BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G
    Text: 1.0 Design Specifications Inputs Output #1 VinMin=80V Vout1=LED dependant, up to 32V VinMax=135V Iout1=0.6A A bill of materials below describes the parts used on this demonstration board. A schematic and layout have also been included below along with measured performance characteristics. The above restrictions for the input voltage are valid


    Original     		PDF LM3445 CSP-9-111S2) CSP-9-111S2. RD-172 DIP4NS BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G

    HV816

    Abstract: DIMMABLE HV816SG-G 80nf DR1030 Si7820DN
    Text: Product Summary Sheet HV816 High Voltage, Dimmable EL Lamp Driver VIN CIN 47µF Applications: Laptop keyboards Netbook keyboards Display signs Portable instrumentation equipment ► Electronic organizers LX = 22µH Cooper DR1030-220-R CG 0.1µF ► ► ►


    Original     		PDF HV816 DR1030-220-R) Si7820DN 100nF 16-Lead HV816 DIMMABLE HV816SG-G 80nf DR1030

    cs 740 mosfet

    Abstract: HV816 HV816SG-G DR1030 H816 MO-220 Si7820DN MOSFET "MARKING CODE 7V"
    Text: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features ► 360VPP output voltage for high brightness ► Large output load capability of up to 150nF ► 2.7 to 5.5V operating supply voltage ► Single lithium ion cell compatible ► Adjustable output regulation for dimming


    Original     		PDF HV816 360VPP 150nF 16-Lead HV816 DSFP-HV816 A010511 cs 740 mosfet HV816SG-G DR1030 H816 MO-220 Si7820DN MOSFET "MARKING CODE 7V"

    HV816DB1

    Abstract: capacitor 100nf 0805 capacitor 100nf 50v 0805 vishay HV816SG-G hv816 DR1030 super fast diode SMA BAS20 BAS20HT1 Si7820DN
    Text: Supertex inc. HV816DB1 High Brightness 20in2 EL Lamp Driver Demoboard General Description The Supertex HV816DB1 is a high brightness EL lamp driver demoboard with the circuitry to drive EL lamp sizes of up to 20in2. The HV816SG-G is in an SOW-16 package with


    Original     		PDF HV816DB1 20in2 HV816DB1 20in2. HV816SG-G SOW-16 10in2 HV816DB2 capacitor 100nf 0805 capacitor 100nf 50v 0805 vishay hv816 DR1030 super fast diode SMA BAS20 BAS20HT1 Si7820DN

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features 360VPP output voltage for high brightness Large output load capability of up to 150nF 2.7 to 5.5V operating supply voltage Single lithium ion cell compatible Adjustable output regulation for dimming


    Original     		PDF HV816 360VPP 150nF 16-Lead HV816 DSFP-HV816 B032012

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS