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Vishay Siliconix SIR770DP-T1-GE3 MOSFET 2N-CH 30V 8A PPAK SO8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR770DP-T1-GE3	Cut Tape			1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
	SIR770DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.46297	Buy Now
	SIR770DP-T1-GE3	Digi-Reel			1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
New Advantage Corporation	SIR770DP-T1-GE3		12,000		1	1 - 10 - 100 - 1000 - 10000 $0.5857	Buy Now
Vishay Intertechnologies SIR770DP-T1-GE3 DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel (Alt: SIR770DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR770DP-T1-GE3	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.4182	Buy Now
Mouser Electronics	SIR770DP-T1-GE3		5,355			1 $1.33 10 $0.895 100 $0.629 1000 $0.487 10000 $0.425	Buy Now
Newark	SIR770DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.453	Buy Now
TTI	SIR770DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.425	Buy Now
TME	SIR770DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.69	Get Quote

EBV Elektronik	SIR770DP-T1-GE3			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SIR770DP-T1-GE3 MOSFET 2N-CH 30V 8A PPAK SO-8 / Mosfet Array 30V 8A 17.8W Surface Mount PowerPAK? SO-8 Dual
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIR770DP-T1-GE3		21,228			1 - 10 - 100 $0.6767 1000 $0.4512 10000 $0.4512	Buy Now

SIR770DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR770DP-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8SO		Original	PDF

SIR770DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0	Original	SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
12706 Abstract: No abstract text available Text: SiR770DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiR770DP AN609, 1179m 16-Sep-10 12706	PDF
Untitled Abstract: No abstract text available Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V (A)a, f 8.0 8.0 8.0 8.0	Original	SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0	Original	SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0	Original	SiR770DP 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0	Original	SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF