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    Vishay Siliconix SIA920DJ-T1-GE3

    MOSFET 2N-CH 8V 4.5A PPAK8X8
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    DigiKey SIA920DJ-T1-GE3 Reel
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    Vishay Intertechnologies SIA920DJT1GE3

    DUAL N-CHANNEL 8 V (D-S) MOSFET Power Field-Effect Transistor, 4.5A I(D), 8V, 0.027ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIA920DJT1GE3 3,000
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    SIA920DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA920DJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 8V 4.5A SC-70 Original PDF

    SIA920DJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    62630

    Abstract: No abstract text available
    Text: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiA920DJ 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62630 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A)a 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		SiA920DJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A)a 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		SiA920DJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    marking G2

    Abstract: No abstract text available
    Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A)a 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		SiA920DJ SC-70-6 SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking G2 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A)a 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		SiA920DJ SC-70-6 SC-70 2002/95/EC 11-Mar-11 PDF

    131050

    Abstract: No abstract text available
    Text: SiA920DJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiA920DJ AN609, 5187u 8398m 4022m 0761u 4691u 8647u 4259u 16-Jun-11 131050 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a RDS(on) () 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		SiA920DJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A)a 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		SiA920DJ SC-70-6 SC-70 2002/95/EC 11-Mar-11 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402 PDF

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH PDF

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802 PDF