Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI7625DN Search Results

    SF Impression Pixel

    SI7625DN Price and Stock

    Vishay Siliconix SI7625DN-T1-GE3

    MOSFET P-CH 30V 35A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7625DN-T1-GE3 Cut Tape 20,242 1
    • 1 $1.66
    • 10 $1.051
    • 100 $1.66
    • 1000 $0.50527
    • 10000 $0.50527
    		Buy Now
    SI7625DN-T1-GE3 Digi-Reel 20,242 1
    • 1 $1.66
    • 10 $1.051
    • 100 $1.66
    • 1000 $0.50527
    • 10000 $0.50527
    		Buy Now
    SI7625DN-T1-GE3 Reel 18,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.44429
    		Buy Now
    New Advantage Corporation SI7625DN-T1-GE3 6,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5333
    		Buy Now

    Vishay Intertechnologies SI7625DN-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7625DN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7625DN-T1-GE3 Reel 9,000 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.39852
    		Buy Now
    Mouser Electronics SI7625DN-T1-GE3 70,130
    • 1 $1.12
    • 10 $0.786
    • 100 $0.579
    • 1000 $0.459
    • 10000 $0.405
    		Buy Now
    Newark SI7625DN-T1-GE3 Cut Tape 15,310 1
    • 1 $0.79
    • 10 $0.774
    • 100 $0.588
    • 1000 $0.588
    • 10000 $0.588
    		Buy Now
    SI7625DN-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.431
    		Buy Now
    TTI SI7625DN-T1-GE3 Reel 30,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.394
    		Buy Now
    TME SI7625DN-T1-GE3 1
    • 1 $0.91
    • 10 $0.82
    • 100 $0.65
    • 1000 $0.61
    • 10000 $0.61
    		Get Quote
    Chip 1 Exchange SI7625DN-T1-GE3 3,188
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Asia SI7625DN-T1-GE3 3,000 19 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Chip-Germany GmbH SI7625DN-T1-GE3 80
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SI7625DN-T1-GE3 17 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SI7625DN-T1-GE3.

    Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:52W Rohs Compliant: Yes |Vishay SI7625DN-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI7625DN-T1-GE3. Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.431
    		Buy Now

    Vishay Huntington SI7625DN-T1-GE3

    P-Channel 30 V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI7625DN-T1-GE3 24,292
    • 1 -
    • 10 -
    • 100 $0.5159
    • 1000 $0.3995
    • 10000 $0.3995
    		Buy Now

    SI7625DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7625DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 1212-8 PPAK Original PDF

    SI7625DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si7625DN

    Abstract: mosfet 4430 si7625 S10-2503
    Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7625DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7625DN

    Abstract: 1055 AN609 si7625
    Text: Si7625DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si7625DN AN609, 02-Mar-10 1055 AN609 si7625 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7625DN

    Abstract: S10-0638-Rev si7625
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08 S10-0638-Rev si7625 PDF

    SIS443DN

    Abstract: Si7625DN S12307
    Text: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS443DN Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Si7625DN S12307 PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		SC-75 VMN-PT0197-1006 SI4497 PDF