Untitled
Abstract: No abstract text available
Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
SiHD3N50D
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
|
Original
|
1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
|
PDF
|
DIODE BY 255
Abstract: C67078-S1406-A2
Text: BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol
|
Original
|
O-220
C67078-S1406-A2
DIODE BY 255
C67078-S1406-A2
|
PDF
|
D1403
Abstract: No abstract text available
Text: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance
|
Original
|
NP30NOGHLD
NP30N06lLD
O-251
O-252
D1403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D DPAK (TO-252)
|
Original
|
IRFR220,
IRFU220,
SiHFR220
SiHFU220
O-252)
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 29 Qgd (nC) 57 Configuration Single Low figure-of-merit (FOM) Ron x Qg
|
Original
|
SiHW47N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses
|
Original
|
SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 12
|
Original
|
SiHU3N50D
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS
|
Original
|
SiHA15N60E
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS
|
Original
|
SiHG23N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHA12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
|
Original
|
SiHA12N60E
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS
|
Original
|
SiHA22N60E
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.6 Qg max. (nC) 40 • Reduced switching and conduction losses
|
Original
|
SiHF7N60E
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7153DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = -10 V -18 a 0.0120 at VGS = -6 V -18 a 0.0150 at VGS = -4.5 V -18 a Qg (TYP.) 31 nC • TrenchFET Gen. III P-Channel power MOSFET
|
Original
|
Si7153DN
Si7153DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
|
transistor C 2290
Abstract: td 1410 NP34N03HLD NP34N03ILD
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP34N03HLD,NP34N03ILD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION
|
Original
|
NP34N03HLD
NP34N03ILD
NP34N03HLD
O-251
O-252
transistor C 2290
td 1410
NP34N03ILD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:
|
Original
|
Si5459DU
Si5459DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:
|
Original
|
Si5459DU
Si5459DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
SI8821EDB
Abstract: No abstract text available
Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC
|
Original
|
Si8821EDB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
schottky DIODE MOTOROLA B14
Abstract: b14 smb diode motorola diode marking B14 BRS140T3
Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier M BRS140T3 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with
|
OCR Scan
|
MBRS140T3/D
S140T3
03A-03
schottky DIODE MOTOROLA B14
b14 smb diode
motorola diode marking B14
BRS140T3
|
PDF
|
Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #
|
OCR Scan
|
QD0D013
534-61S1
A1D207A
A1D207E
A1E207A
A1E207E
A1A210D
A1A210E
A1B210D
A1B210E
Ry110
diode cross reference
RY104
a2305
RY115
MICROWAVE ASSOCIATES
IN3716
diode ry24
RY101
1N3717
|
PDF
|
diode a63
Abstract: ERA22 T460 T930 marking code YK Q03I 40114
Text: ERA22 o .5A : O utline D raw in g s FAST RECOVERY DIODE • t t * : Features • m ' m , 5m m t r ? * a » » A s m ■ IR Ultra smalt package. tjs : M arkin g Possible fo r 5m m pitch autom atic insertion A7 - -3 - K Color code • Green High voltage by mesa design.
|
OCR Scan
|
ERA22
19S24^
095t/R89
diode a63
T460
T930
marking code YK
Q03I
40114
|
PDF
|
DIODE BUZ 94
Abstract: No abstract text available
Text: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
O-220
C67078-S1406-A2
40-------V
DIODE BUZ 94
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A ^bS on 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
O-220
C67078-S1406-A2
fi535bÃ
Q064b51
|
PDF
|
SIL02456
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 255 • N channel • Enhancement mode • Avalanche-rated Type VDs ¡D ^DS on Package 11 Ordering Code BUZ 255 250 V 13.0 A 0.24 Q TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 31 "C
|
OCR Scan
|
O-220
C67078-S1406-A2
SIL02456
SIL02456
|
PDF
|
