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    SI5459DU Price and Stock

    Vishay Siliconix SI5459DU-T1-GE3

    MOSFET P-CH 20V 8A PPAK
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    DigiKey SI5459DU-T1-GE3 Cut Tape 2,407 1
    • 1 $0.98
    • 10 $0.612
    • 100 $0.3992
    • 1000 $0.27777
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    SI5459DU-T1-GE3 Digi-Reel 1
    • 1 $0.98
    • 10 $0.612
    • 100 $0.3992
    • 1000 $0.27777
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    SI5459DU-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.19375
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    Vishay Intertechnologies SI5459DU-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI5459DU-T1-GE3)
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    Avnet Americas SI5459DU-T1-GE3 Reel 19 Weeks 3,000
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    SI5459DU-T1-GE3 Reel 3,000
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    • 10000 $0.19026
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    Mouser Electronics SI5459DU-T1-GE3 21,611
    • 1 $0.79
    • 10 $0.587
    • 100 $0.389
    • 1000 $0.272
    • 10000 $0.222
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    Newark SI5459DU-T1-GE3 Reel 3,000
    • 1 $0.273
    • 10 $0.273
    • 100 $0.273
    • 1000 $0.273
    • 10000 $0.247
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    SI5459DU-T1-GE3 Cut Tape 3,000
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    • 10000 $0.295
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    TTI SI5459DU-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.211
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    Chip1Stop SI5459DU-T1-GE3 Cut Tape 21
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    EBV Elektronik SI5459DU-T1-GE3 19 Weeks 3,000
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    Vishay Intertechnologies SI5459DU-T1-GE3.

    P Channel Mosfet, -20V, 8A, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.4V Rohs Compliant: No |Vishay SI5459DU-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI5459DU-T1-GE3. Reel 3,000
    • 1 $0.267
    • 10 $0.267
    • 100 $0.267
    • 1000 $0.267
    • 10000 $0.241
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    SI5459DU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI5459DU-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 8A CHIPFET Original PDF

    SI5459DU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:


    Original     		PDF Si5459DU Si5459DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:


    Original     		PDF Si5459DU Si5459DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5459DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.052 at VGS = - 4.5 V - 8e 0.082 at VGS = - 2.5 V - 7.5 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5459DU 2002/95/EC Si5459DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    65260

    Abstract: AN609 si5459
    Text: Si5459DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si5459DU AN609, 22-Jul-09 65260 AN609 si5459

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5459DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.052 at VGS = - 4.5 V - 8e 0.082 at VGS = - 2.5 V - 7.5 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5459DU 2002/95/EC Si5459DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si5459DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5459DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.052 at VGS = - 4.5 V - 8e 0.082 at VGS = - 2.5 V - 7.5 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5459DU 2002/95/EC Si5459DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si5459

    Abstract: No abstract text available
    Text: New Product Si5459DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.052 at VGS = - 4.5 V - 8e 0.082 at VGS = - 2.5 V - 7.5 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5459DU 2002/95/EC Si5459DU-T1-GE3 18-Jul-08 si5459

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5459DU Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si5459DU 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:


    Original     		PDF Si5459DU Si5459DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5459DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.052 at VGS = - 4.5 V - 8e 0.082 at VGS = - 2.5 V - 7.5 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5459DU 2002/95/EC Si5459DU-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints


    Original     		PDF VMN-PT0102-1007

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . OPTOELECTRONICS Proximity Sensors Proximity Sensing from 2 mm to 2 m Many applications require a sensor that detects not only the presence of an object, but also its relative proximity. Vishay’s proximity sensors emit pulses of infrared light which reflect off an object back to the


    Original     		PDF VMN-PL0479-1404

    VCNL4010

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Proximity Sensors Proximity Sensing from 2 mm to 2 m Many applications require a sensor that detects not only the presence of an object, but also its relative proximity. Vishay’s proximity sensors emit pulses of infrared light which reflect off an object back to the


    Original     		PDF VMN-PL0479-1409 VCNL4010

    SI5517

    Abstract: si5459
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline AND TEC I INNOVAT O L OGY PowerPAK ChipFET® N HN POWER MOSFETs O 19 62-2012 Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints


    Original     		PDF Si5517DU VMN-PT0102-1209 SI5517 si5459

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477