Abstract: No abstract text available
Text: Si7153DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = -10 V -18 a 0.0120 at VGS = -6 V -18 a 0.0150 at VGS = -4.5 V -18 a Qg (TYP.) 31 nC • TrenchFET Gen. III P-Channel power MOSFET