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Vishay Siliconix SI8821EDB-T2-E1 MOSFET P-CH 30V 4MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8821EDB-T2-E1	Digi-Reel	5,241		1	1 $0.6 10 $0.372 100 $0.6 1000 $0.16077 10000 $0.16077	Buy Now
	SI8821EDB-T2-E1	Cut Tape	5,241		1	1 $0.6 10 $0.372 100 $0.6 1000 $0.16077 10000 $0.16077	Buy Now
	SI8821EDB-T2-E1	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.13691	Buy Now
Vishay Intertechnologies SI8821EDB-T2-E1 Trans MOSFET P-CH 30V 2.3A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8821EDB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8821EDB-T2-E1	Reel	3,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.09717	Buy Now
Mouser Electronics	SI8821EDB-T2-E1		26,863			1 $0.56 10 $0.352 100 $0.176 1000 $0.158 10000 $0.107	Buy Now
Newark	SI8821EDB-T2-E1	Reel			3,000	1 $0.166 10 $0.166 100 $0.166 1000 $0.166 10000 $0.137	Buy Now
TTI	SI8821EDB-T2-E1	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.107	Buy Now
EBV Elektronik	SI8821EDB-T2-E1			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI8821EDB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8821EDB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V MICRO FOOT		Original	PDF

SI8821EDB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.135 at VGS = -4.5 V -2.3 0.150 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC	Original	Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC	Original	Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8821EDB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.128 at VGS = - 4.5 V - 2.3 0.143 at VGS = - 3.7 V - 2.1 0.215 at VGS = - 2.5 V - 1.8 VDS (V) - 30 Qg (Typ.) 5.2 nC	Original	Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI8821EDB Abstract: No abstract text available Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC	Original	Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	Si8489EDB Si8902AEDB VMN-PT0107-1402	PDF