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    SIHW47N60E Price and Stock

    Vishay Siliconix SIHW47N60E-GE3

    MOSFET N-CH 600V 47A TO247AD
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    DigiKey SIHW47N60E-GE3 Tube 370 1
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    Vishay Siliconix SIHW47N60EF-GE3

    MOSFET N-CH 600V 47A TO247AD
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    DigiKey SIHW47N60EF-GE3 Tube 480
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    Vishay Intertechnologies SIHW47N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHW47N60E-GE3)
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    Avnet Americas SIHW47N60E-GE3 Reel 18 Weeks 480
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    Mouser Electronics SIHW47N60E-GE3 1,096
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    Onlinecomponents.com SIHW47N60E-GE3 126
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    Quest Components SIHW47N60E-GE3 18
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    Vishay Intertechnologies SIHW47N60EF-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHW47N60EF-GE3)
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    Avnet Americas SIHW47N60EF-GE3 Reel 18 Weeks 480
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    Mouser Electronics SIHW47N60EF-GE3 430
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    Skyworks Solutions Inc SIHW47N60EF-GE3

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    Bristol Electronics SIHW47N60EF-GE3 1,080
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    SIHW47N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHW47N60EF-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO-247AD Original PDF
    SIHW47N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO-247AD Original PDF

    SIHW47N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg


    Original
    PDF SiHW47N60EF O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 29 Qgd (nC) 57 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original
    PDF SiHW47N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    PDF SiHW47N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MOSFET circuit welding INVERTER

    Abstract: No abstract text available
    Text: SiHW47N60EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg


    Original
    PDF SiHW47N60EF O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 MOSFET circuit welding INVERTER

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    PDF SiHW47N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    PDF SiHW47N60E O-247AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original
    PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •    


    Original
    PDF O-220, O-263, O-220F, O247AD, O-247AC SiHP21N60EF SiHB21N60EF SiHA21N60EF SiHG21N60EF SiHG47N60EF

    v0615a

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7


    Original
    PDF J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a

    SMD resistors codes

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer デスクトップPC サーバー 4 組み込み型システム 5 SSD(ソリッドステートディスク) 6


    Original
    PDF J-STD-020 SC-70 WSL1206 VMN-MS6792-1304-COSC SMD resistors codes