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    SIHG47N60E Price and Stock

    Vishay Siliconix SIHG47N60EF-GE3

    MOSFET N-CH 600V 47A TO247AC
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    DigiKey SIHG47N60EF-GE3 Tube 463 1
    • 1 $6.73
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    Vishay Siliconix SIHG47N60E-GE3

    MOSFET N-CH 600V 47A TO247AC
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    DigiKey SIHG47N60E-GE3 Tube 385 1
    • 1 $9.37
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    Vishay Siliconix SIHG47N60E-E3

    MOSFET N-CH 600V 47A TO247AC
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    DigiKey SIHG47N60E-E3 Tube 225 1
    • 1 $9.37
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    Quest Components SIHG47N60E-E3 501
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    Vishay Intertechnologies SIHG47N60E-E3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHG47N60E-E3)
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    Avnet Americas SIHG47N60E-E3 Tube 18 Weeks 500
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    Mouser Electronics SIHG47N60E-E3 730
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    Newark SIHG47N60E-E3 Bulk 1
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    Quest Components SIHG47N60E-E3 2
    • 1 $10.41
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    Vishay Intertechnologies SIHG47N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHG47N60E-GE3)
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    Avnet Americas SIHG47N60E-GE3 Reel 18 Weeks 500
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    Mouser Electronics SIHG47N60E-GE3 3,398
    • 1 $9.37
    • 10 $8.36
    • 100 $6.37
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    Verical SIHG47N60E-GE3 900 2
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    TME SIHG47N60E-GE3 316 1
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    Find more SIHG47N60E price and stock on Findchips.com

    SIHG47N60E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHG47N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF
    SIHG47N60EF-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF
    SIHG47N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF

    SIHG47N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C180-24

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG47N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 C180-24

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG47N60E AN609, 5391m 4083m 1563m 0804m 3952m 4962m 3204m 3423m

    4810 mosfet

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 4810 mosfet

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihg47n60ef

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E 2002/95/EC O-247AC 11-Mar-11

    4810 mosfet

    Abstract: SIHG47N60E
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E 2002/95/EC O-247AC 11-Mar-11 4810 mosfet

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 2014 Super 12 Products SiHG47N60E / E Series High-Voltage MOSFETs SiHG47N60E / E Series Low Conduction and Switching Losses for Use in a Wide Range of Products • • Features • High performance – Low RDS ON , QSW and COSS for high efficiency › Low FOM (low RDS(ON) x Qg)


    Original     		PDF SiHG47N60E O-247

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG47N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Generation Two


    Original     		PDF SiHG47N60E 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiHG47N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4810 mosfet

    Abstract: sihg47n60e
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG47N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4810 mosfet

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy 太陽光発電 Mメインインバータ < 50 kW 4 マイクロインバータ 5


    Original     		PDF VMN-MS6792-1304-AESO

    Untitled

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. SUPER 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 2 WSLP High-Power Surface-Mount Power Metal Strip Current Sensing Resistor TMBS® in SMPA Trench MOS Barrier Schottky Rectifiers in


    Original     		PDF com/ref/2014s12 TCPT1350X01 TCUT1350X01 SiZ340DT VMN-MS6834-1312

    QUAD HIFREQ

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 WSLp 2 SmpAパッケージのTmBS 3 prAhT 4 高電力表面実装型Power Metal Strip 電流検出抵抗器 薄型SMPA パッケージのTrench MOSバリア・ショットキー


    Original     		PDF com/ref/2014s12 TCpT1350X01 TCuT1350X01 SiZ340DT VMN-MS6882-1403 QUAD HIFREQ

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Telecommunications Infrastructure Transmitters, Base Stations


    Original     		PDF AEC-Q101 VMN-MS6761-1212

    AN844

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power


    Original     		PDF AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •    


    Original     		PDF O-220, O-263, O-220F, O247AD, O-247AC SiHP21N60EF SiHB21N60EF SiHA21N60EF SiHG21N60EF SiHG47N60EF

    v0615a

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7


    Original     		PDF J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a