Untitled
Abstract: No abstract text available
Text: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package
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APT10SCE170B
O-247
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ISO203
Abstract: No abstract text available
Text: PG127S17 10A (1700V/10A) Outline Drawings FAST RECOVERY DIODE TO-3PF 15.5±0.3 5.5±0.3 Ø3.2±0.2 2.3±0.2 21.5±0.3 5.5±0.2 9.3±0.3 3.5+0.3 Features 1.6±0.3 20 Min 2.1±0.3 +0.2 1.1-0.1 Damper diode for high definition TV and high resolution display
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PG127S17
700V/10A)
PG127S17
ISO203
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Untitled
Abstract: No abstract text available
Text: PG127S17 10A (1700V/10A) Outline Drawings FAST RECOVERY DIODE TO-3PF 15.5±0.3 Ø3.2±0.2 5.5±0.3 2.3±0.2 21.5±0.3 5.5±0.2 9.3±0.3 3.5+0.3 Features 1.6±0.3 20 Min 2.1±0.3 +0.2 1.1-0.1 Damper diode for high definition TV and high resolution display
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PG127S17
700V/10A)
PG127S17
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PG127S17
Abstract: No abstract text available
Text: PG127S17 10A (1700V/10A) Outline Drawings FAST RECOVERY DIODE TO-3PF 15.5±0.3 Ø3.2±0.2 5.5±0.3 2.3±0.2 21.5±0.3 5.5±0.2 9.3±0.3 3.5+0.3 Features 1.6±0.3 20 Min 2.1±0.3 +0.2 1.1-0.1 Damper diode for high definition TV and high resolution display
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PG127S17
700V/10A)
PG127S17
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PG127S17
Abstract: DI810 diode 1700v 10a
Text: PG127S17 10A (1700V/10A) Outline Drawings FAST RECOVERY DIODE TO-3PF 15.5±0.3 Ø3.2±0.2 5.5±0.3 2.3±0.2 21.5±0.3 5.5±0.2 9.3±0.3 3.5+0.3 Features 1.6±0.3 20 Min 2.1±0.3 +0.2 1.1-0.1 Damper diode for high definition TV and high resolution display
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PG127S17
700V/10A)
PG127S17
DI810
diode 1700v 10a
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DS30210
Abstract: No abstract text available
Text: MURF10170 ADVANCE INFORMATION 1700V 10A DAMPER RECTIFIER DIODE Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Recovery Times for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 60A Peak
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MURF10170
ITO-220AC
MIL-STD-202,
DS30210
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IXGH16N170A
Abstract: IXGT16N170A
Text: IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M
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IXGT16N170A
IXGH16N170A
IXGT16N170AH1
IXGH16N170AH1
16N170A
DH10A-1800PA
IXGH16N170A
IXGT16N170A
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Untitled
Abstract: No abstract text available
Text: IXGR16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 1700V 8A 5.0V 35ns ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M
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IXGR16N170AH1
ISOPLUS247TM
16N170A
DH10A-1800PA
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FZ1600R12KF4
Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC
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600V/1700V
500V/3300V
50GB60DLC
75GB60DLC
100GB60DLC
150GB60DLC
200GB60DLC
300GB60DLC
FZ1600R12KF4
IGBT FZ 800
75GD120DN2
100GB170DN2
IGBT FZ 1200r16kf4
igbt driver
BSM10GD60DLC
FZ800R12KL4C
igbt 1600V 20A
eupec igbt BSM 100 gb
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NTE2669
Abstract: No abstract text available
Text: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display-Color TV's in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage
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NTE2669
NTE2669
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Untitled
Abstract: No abstract text available
Text: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage
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NTE2669
NTE2669
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Untitled
Abstract: No abstract text available
Text: FFAF10U170S FFAF10U170S Features • High voltage and high reliability • High speed switching • Low forward voltage TO-3PF Applications 1 • Suitable for damper diode in horizontal deflection circuits 2 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings
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FFAF10U170S
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IGBT inverter calculation
Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
Text: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling
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IXAN0070
IGBT inverter calculation
3 phase IGBT inverter design
design drive circuit of IGBT
inverter circuit using IGBT module
igbt
igbt sixpack
IXAN0070
IGBT JUNCTION TEMPERATURE CALCULATION
igbt 600V 100A short circuit
IGBT CHIP 1700V
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Untitled
Abstract: No abstract text available
Text: APT10SCE170D Zero Recovery Silicon Carbide Schottky Die PRODUCT APPLICATIONS PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC • Higher Reliability Systems • Minimizes or eliminates snubber PRODUCT FEATURES
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APT10SCE170D
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Untitled
Abstract: No abstract text available
Text: SKHI 21A R . Absolute Maximum Ratings Symbol Conditions R^954&5 R^9KK4&5 b9H1M?HB)( /9? ,H?BI '9B1@J( ?%&4O E5?H1 )&J5@B '9B1O 8D&J2: +H1?H1 ?(@L >H%%(51 +H1?H1 @'(%@J( >H%%(51 4@YO )0&1>2&5J K%([H(5>I G9BB(>19% (4&11(% '9B1@J( )(5)( @>%9) 12( E^_/ R@1( 9K %&)( @5$ K@BB 9K '9B1@J( )(>95$@%I
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A91194
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2SC5521
Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
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500V/1600V/1700V/1800V/2000V
2SC5521
2SC5522
2SC5584
2sc5524
2SC5517
2SC5516
2SC5516 equivalent
2sc5572
2SC5622
2SC5546
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2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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power IGBT MOSFET transistor GTO SCR di
Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power
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c5411
Abstract: c5411 transistor S2000N equivalent 2SC5570 equivalent S2055N equivalent 2SD1555 equivalent c5411 equivalent S2055AF equivalent 2SD2539 equivalent 2SD2499 equivalent
Text: Horizontal-Deflection Output Transistors PRODUCT GUIDE Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA16N170AHV IXBT16N170AHV VCES = 1700V IC25 = 16A VCE sat 6.0V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700
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IXBA16N170AHV
IXBT16N170AHV
O-263HV
338B2
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pnp 1500v 8a
Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
Text: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV
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1S00V
2SD1543
2SD1544
2SD1553
2SD1554
2SD2089
2SD1545
2SD1546
2SD2498
2SD1547
pnp 1500v 8a
fr120
2SD1548
2SD2253
2SC4352
2sc5027
2SC2706
2SD2499
2sc4544
diode 6a 250v
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TF02
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE U nit in mm H O R IZ O N T A L D EF L E C T IO N O U T P U T FO R H IG H R E S O L U T IO N D ISP LA Y , C O L O R TV H IG H SP E E D S W IT C H IN G A P P L IC A T IO N S • • High Voltage : V cBO—1700V Low Saturation Voltage
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cBO--1700V
400mA,
TF02
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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horizontal deflection circuit
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
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64kHz.
BY479X-1700
OD113
horizontal deflection circuit
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