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    D2219 Search Results

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    D2219 Price and Stock

    Central Semiconductor Corp MD2219A

    TRANS 2NPN 30V 0.5A TO-78
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    DigiKey MD2219A Bulk 69 1
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    Amphenol Industrial Operations GTCY06CD-22-19P

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    Vishay Beyschlag MBB02070D2219DC100

    RES 22.1 OHM 0.6W 0.5% AXIAL
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    DigiKey MBB02070D2219DC100 Ammo Pack 1,000
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    Vishay Beyschlag MMB02070D2219CB200

    MMB 0207-25 0.25% B2 22R1
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    Vishay Beyschlag SMM02040D2219DB300

    RES 22.1 OHM 0.5% 1/4W MELF 0204
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    D2219 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D2219 Semelab METAL GATE RF SILICON FET Original PDF
    D2219UK Semelab Metal Gate RF Silicon FET Original PDF

    D2219 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d2219uk

    Abstract: No abstract text available
    Text: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss


    Original     		PDF D2219UK-P d2219uk

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE


    Original     		PDF D2219UK 24swg

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE


    Original     		PDF D2219UK -10mm 24swg

    d2219uk

    Abstract: DSA00300037
    Text: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2219UK d2219uk DSA00300037

    d2219uk

    Abstract: No abstract text available
    Text: TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE


    Original     		PDF D2219UK 24swg d2219uk

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    LM318 data

    Abstract: LM318 APPLICATION LM318D LM318 LM218 LM318 application note LM318J LM218D LM218P LM318JG
    Text: LM218, LM318 HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS D2219, JUNE 1976-REVISED OCTOBER 1988 • Small-Signal Bandwidth . . . 15 MHz Typ D, JG , OR P PACKAGE TOP VIEW • Slew Rate . . . 50 V/ |is Min BAL/COMP C • Bias Current. . . 250 nA Max (LM218) • Supply Voltage Range . . . ± 5 V to ± 20 V


    OCR Scan     		PDF LM218, LM318 D2219, 1976-REVISED LM218) LM218 LM318 data LM318 APPLICATION LM318D LM318 application note LM318J LM218D LM218P LM318JG

    LM318D

    Abstract: LM318 LM218 LM318 data LM318J LM218D LM218P LM318JG
    Text: TEXAS INSTR LIN/INTFC m fl=ibl72M DD77455 b LM218, LM318 HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS 7 - ^ 7 9 '0 6 -/0 IflE D D2219, JUNE 1976—REVISEO OCTOBER 1988 • Small-Signal Bandwidth . . . 15 MHz Typ D, JG , OR P PACKA G E (TOP VIEW) • Slew R a te . . . 50 V/|is Min


    OCR Scan     		PDF ibl72M DD77455 LM218, LM318 D2219, 1976--REVISEO LM218) LM218 LM318D LM318 data LM318J LM218D LM218P LM318JG

    Untitled

    Abstract: No abstract text available
    Text: nil Vrr r = mi TetraFET D2219UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS


    OCR Scan     		PDF D2219UK S08PACKAGE

    Untitled

    Abstract: No abstract text available
    Text: nil TetraFET itfi llll SEME D2219UK LAB METAL GATE RF SILICON FET MECHANICAL DATA C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 12.5V - 1 GHz SINGLE ENDED B I JT\ X L. ► * FEATURES • SIMPLIFIED AMPLIFIER DESIGN * • SUITABLE FOR BROAD BAND APPLICATIONS


    OCR Scan     		PDF D2219UK S08PACKAGE

    72s4

    Abstract: MD2218 MD2218AF MD2218F MD2219 MD2219AF MD2219F MQ2218 MQ2219
    Text: MOTOROLA SC 6367254 -CXSTRS/R Tb F> MO TO RO L A SC XSTRS/R D E ^ ti3Li7E!54 82435 96D F M D 2 2 1 8A F M D2219AF M 02218, A MD2218AF Symbol M 02219,A D2219AF VCEO 30 40 Collector-Base Voltage VcBO 60 75 Vdc Emitter-Base Voltage V EBO 5.0 6.0 Vdc 500 *C


    OCR Scan     		PDF MD2218 MD2219 M02218, MQ2219 MD2218AF MD2219AF MD2218F MD2219F 72s4 MQ2218

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC CXSTRS/R F 4bE D b3b72SH 00=12421 7 • MOTb MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M D2219AF DM0 Discrete M ilitary Products NPIM S ilic o n Dual Sm all-Signal T ra n sisto r Suffixes: H X, H X V /#///#/ Processed per MIL-S-19500/251 . . . d e s ig n e d fo r g e n e ra l-p u rp o se sw itch in g and a m p lifie r a p p lica tio n s


    OCR Scan     		PDF b3b72SH D2219AF MIL-S-19500/251 O-116)

    2N1711 MOTOROLA

    Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
    Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency


    OCR Scan     		PDF SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent

    BSy38

    Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


    OCR Scan     		PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 16NPN BSY51 BSy38 Motorola* 2n708 2N1711 MOTOROLA DH3467CD BSY39 SP3725 SP3725QDB tch98

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


    OCR Scan     		PDF

    2N2270 equivalent

    Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76

    C4161

    Abstract: C3746 B1134 B1133 d1913 k1420 J307 B1136 D1825 d1667
    Text: san yo Urnarte d:TO-220lHL # :T 0 220MF T 0 -2 2 0 M I —. . S 'il-' T y p e T r a n s i s t o r s rkirl inmrml \ VŒD 'Hv 30 50 60 80 85 100 120 160 200 250 300 400 500 600 800 900 A )\ 0.02 0.2 M?WcT 1 A1697 C4474 0.4 A1696 C4473 1.5 . A1606 C3751 C4159


    OCR Scan     		PDF O-220l T0220MF T0-220MI C4031# A1697 C4474 C4075 A1696 C4473 A1606 C4161 C3746 B1134 B1133 d1913 k1420 J307 B1136 D1825 d1667

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    c4460

    Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
    Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4


    OCR Scan     		PDF 1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895

    D1651

    Abstract: d1047 c3987 B817 c2078 D1650 d1402 D1649 B1273 d1878
    Text: MOS FET : VDSS, I D C o n t i n u e d on n e x t p a g e T O - 2 2 0 . F I ( L S , t y p e ) 50 60 75 80 D1394* A1258* B507 B1273 B1346 C3144* D313 D1912 D2027 C2078 C4547* 3 3. 5 4 4. 5 B824 D1060 D1395* 5 5. 5 6 8 9 10 12 15 150 200 250 J 282 B884* D1194 *


    OCR Scan     		PDF D1394* A1258* B1273 B1346 C3144* D1912 D2027 A1259* A1289 C3145 D1651 d1047 c3987 B817 c2078 D1650 d1402 D1649 d1878