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    MP3731

    Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
    Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed


    OCR Scan     		PDF MP2100A, MP2200A, MP2300A, MP2400A MP2000A MP3730 MP3731 MP3730 MP3731 MP2200A O446 Motorola germanium transistor pnp MP2100A MP2300A MP2400A germanium transistors PNP

    diode aa118

    Abstract: aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"
    Text: AA 118 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Als Diodenpaar für Phasendiskriminatorschaltungen mit hohen Betriebsspannungen. Applications: M atched pairs for phase discriminator circuits with high supply voltages. Abmessungen in mm


    OCR Scan     		PDF AA118 diode aa118 aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"

    aa134 diode

    Abstract: AA134 DIODE AA134 "Point Contact Diode" germanium point contact diode Germanium Diode tfk Germanium Diode aa134 TFK AA134 TFK diode
    Text: A A 134 Germanium-Spitzendiode Germanium point contact diode Anwendungen : Allgemein, für mittlere Betriebsspannungen. Applications: General purpose, for medium supply voltages. Abmessungen in mm Dimensions in mm 0 2 ,6 KATHODE CATHODE _ I- 1 } 1


    OCR Scan     		PDF AA134 U-26---J aa134 diode AA134 DIODE AA134 "Point Contact Diode" germanium point contact diode Germanium Diode tfk Germanium Diode aa134 TFK AA134 TFK diode

    MR830

    Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
    Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —


    OCR Scan     		PDF MP600 MP603 MP600 MP601 MP602 MP603 MR830 germanium power transistors Germanium power

    OC 140 germanium transistor

    Abstract: MA202 MA206 germanium pnp transistor germanium transistor oc 160 germanium transistor
    Text: MA202, MA206 germanium Germanium PNP transistor designed for high-voltage applications in the audio frequency range, such as neon driver, solenoid or relay driver applications. CASE 31(1) (TO-5) All UacU isolated from cat« S T Y L E J: PIN 1. EM ITTER 2. BASE


    OCR Scan     		PDF MA202 MA206 MA206 MA202fMA206 OC 140 germanium transistor germanium pnp transistor germanium transistor oc 160 germanium transistor

    motorola MP2400A

    Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
    Text: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction


    OCR Scan     		PDF MP2000A MP2100A MP2200A MP2300A MP2400A MP2400A motorola MP2400A Motorola germanium transistor pnp AN-415 Germanium power

    transistor WL 431

    Abstract: 2N700A BUV pnp 50a MW1131
    Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,


    OCR Scan     		PDF MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131

    AF279

    Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
    Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB


    OCR Scan     		PDF

    AF280

    Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
    Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:


    OCR Scan     		PDF

    L1116

    Abstract: RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier C30994E photodiode Avalanche photodiode
    Text: E ELECTRO OPTICS IDE D H 3A741S4 ODDDD4fl T • GEEO C30994E Solid State Gamma-Ray Detector 7 -7 ^ 7 Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge3012 Scintillators RCA Developmental type C3Q994E con­ sists of tw o Bismuth Germanium Oxide


    OCR Scan     		PDF C30994E Bi4Ge3012) C3Q994E Wh514) L1116 RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier photodiode Avalanche photodiode

    AF239

    Abstract: germanium-pnp-mesa-hf-transistor AF 239
    Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz


    OCR Scan     		PDF

    AF 109 R

    Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
    Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB


    OCR Scan     		PDF AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor

    AF239

    Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
    Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz


    OCR Scan     		PDF

    MP2060

    Abstract: MP2063 100-C MP2061 MP2062 Germanium power *p2861
    Text: MP2060 thru MP2063 GERMANIUM STYLE): PIN 1. BASE 2. EMITTER CASE:COLLECTOR CASE 11 PNP germanium power tran sisto rs for audio am plifier applications. M AXIM UM R A T IN G S Symbol R a tin g Emitter-Base Voltage Collector Current (Continuous) V CES VCEO


    OCR Scan     		PDF MP2060 MF2063 MP20S1 MP2062 MP2063 MP2060 MP2061 MP20S2 MP2063 100-C MP2061 Germanium power *p2861

    transistor ac 152

    Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121
    Text: ESC ]> • 023SbGS 000402^ 3 H S I E 6 ./ PNP Germanium Transistors A C 121 _ SIEMENS AKTIEN6ESELLSCHAF -— — fo r AF, driver and output stages o f m edium perform ance A C 121 and AC 152 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 metal case


    OCR Scan     		PDF 235b05 Q60103-D121 152IV Q60103-X152-D Q60103-E121 Q6010E AC162 fl535b05 0Q0M03M T-29-tl transistor ac 152 AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121

    KJE transistor

    Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
    Text: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case


    OCR Scan     		PDF 0235bOS Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC151, KJE transistor KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor

    Cv7003

    Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
    Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm


    OCR Scan     		PDF 2772SC 7726A 27727X. 34768X GET103 31419X BS9300-C084) 31428H GET116 31420B Cv7003 Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


    OCR Scan     		PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    AF139

    Abstract: OOQ405 mz 1540
    Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF OOQ405Ã AF139 Q60106-X139 200MHz- A800MHZ- AF139 10lHHz OOQ405 mz 1540

    OC 74 germanium transistor

    Abstract: GERMANIUM SMALL SIGNAL TRANSISTORS germanium Power Transistor G0503 7N51 Germanium power
    Text: MPI 10 GERMANIUM s' / V? , / PNP germanium power transistor designed for high-gain power amplification in the audio range. S T Y L E I: PIN 1. B A SE 2. EM IT T ER CA SE : C O L L E C T O R CASE 11 MAXIMUM R A T IN G S (Tc = 25°C unless otherwise noted)


    OCR Scan     		PDF 10Q-C. OC 74 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS germanium Power Transistor G0503 7N51 Germanium power

    transistor kc 2026

    Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
    Text: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart­ m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,


    OCR Scan     		PDF MIL-S-19500/340 2N2079A Adc-19500/340 2N2079A 2N173 2N2079 2N277 2N2080, 2N2080A 2N278 transistor kc 2026 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026

    ci 740

    Abstract: ci740 germanium transistor pnp XBI03 germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf
    Text: E D ISW A N MAZDA XBI03 L.F. T R A N S IS T O R Germanium PN P Junction Type _ T E N T A T IV E GENERAL The X B I0 3 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the transistor is hermetically sealed in a small can.


    OCR Scan     		PDF XBI03 ci 740 ci740 germanium transistor pnp germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf

    MP1613

    Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
    Text: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt­


    OCR Scan     		PDF MP1613 J001I MP1613 MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power

    k 151 transistor

    Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
    Text: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case


    OCR Scan     		PDF 235bD5 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC161. k 151 transistor transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1