Untitled
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
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FET 3205
Abstract: 3205 FET D1210UK
Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
175MHz
FET 3205
3205 FET
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D1210UK
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
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D1210UK
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
175MHz
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3205 FET
Abstract: FET 3205 transistor c 3205 C 3205 D1210UK
Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
175MHz
D1210UK
175MHz
3205 FET
FET 3205
transistor c 3205
C 3205
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Untitled
Abstract: No abstract text available
Text: D1210UK Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)20.0 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50.0 Minimum Operating Temp (øC)-65
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D1210UK
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
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Untitled
Abstract: No abstract text available
Text: lili TetraFET Étti lili D1210UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA * B * GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W -12.5V -175M H z SINGLE ENDED / ;h 3 \ \ 4 3 FEATURES A A H K • SIMPLIFIED AMPLIFIER DESIGN i J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
-175M
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET D1210UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W -1 2 .5 V -1 7 5 M H z SINGLE ENDED FEATURES 4 _U fT • SIMPLIFIED AMPLIFIER DESIGN I J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1210UK
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Untitled
Abstract: No abstract text available
Text: bGE D ~ • 6133107 DDDDISb 421 «SflLB SEMELAB PLC ' T ' S ^-Z b> SEMELAB D1210UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W -12-5V—175MHz SINGLE ENDED MECHANICAL DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1210UK
-12-5Vâ
175MHz
300/is,
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D2219
Abstract: D2003UK
Text: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en
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OT223
D2219
D2003UK
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