POWER 28V 3A 60W
Abstract: D1003UK 1776
Text: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
175MHz
5-57pF
D1003UK
175MHz
POWER 28V 3A 60W
1776
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D1003UK
Abstract: 6255
Text: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
175MHz
16swg
18swg
D1003UK
6255
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D1003UK
Abstract: No abstract text available
Text: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 100MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
100MHz
D1003UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
175MHz
16swg
18swg
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Untitled
Abstract: No abstract text available
Text: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
175MHz
16swg
18swg
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D1003UK
Abstract: No abstract text available
Text: TetraFET D1003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
175MHz
16swg
18swg
D1003UK
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ferrite core ER25
Abstract: idq06 ft-82 D1017UK ER-25 enamalled wire current
Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS
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D1017UK
175MHz
19swg
ferrite core ER25
idq06
ft-82
D1017UK
ER-25
enamalled wire current
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Untitled
Abstract: No abstract text available
Text: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1009UK
500MHz
UT85-15
25swg
FT50B-43
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Untitled
Abstract: No abstract text available
Text: TetraFET DMD1020 DMD1020-A METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS
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DMD1020
DMD1020-A
400MHz
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DMD1020UK
Abstract: 064R D1003UK D1020UK DMD1020 DMD1020-A
Text: TetraFET DMD1020 DMD1020-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS
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DMD1020
DMD1020-A
400MHz
DMD1020UK
064R
D1003UK
D1020UK
DMD1020
DMD1020-A
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Untitled
Abstract: No abstract text available
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
EXE18
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Ferronics
Abstract: No abstract text available
Text: TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS
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D1018UK
500MHz
19swg
FT82-43
12-360-K
Ferronics
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Untitled
Abstract: No abstract text available
Text: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1028UK
175MHz
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Untitled
Abstract: No abstract text available
Text: IUI TetraFET ËFFË SEME D1003UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6 0 W -2 8 V -1 0 0 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
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Untitled
Abstract: No abstract text available
Text: bOE D • Û133107 SEMELAB PLC □DDDC114 T7 2 ■ SMLB - " SEMELAB D1003UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON D M O S RFFET 60W -28V-100M H z SINGLE ENDED M ECH AN ICA L DATA
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D1003UK
-28V-100M
300/us,
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Untitled
Abstract: No abstract text available
Text: IUI TetraFET =MMË SEM E D1003UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J • SUITABLE FOR BROAD BAND APPLICATIONS
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D1003UK
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BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db
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BFM12
BFM21
BFM22
BFM23
BFM32
BFM33
BFM34
BFM35
D1001UK
D1002UK
BFM33
BFM34
BFM-12
BFM32
D1022UK
D1053UK
D1015UK
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