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    D1017UK Search Results

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    D1017UK Price and Stock

    TT Electronics plc D1017UK.13

    RF MOSFET SE (6) 150W
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    TTI D1017UK.13 Bulk 25
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    TT Electronics Power and Hybrid / Semelab Limited D1017UK

    RF POWER TRANSISTOR
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    Richardson RFPD D1017UK 1
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    D1017UK Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D1017UK Semelab METAL GATE RF SILICON FET Original PDF
    D1017UK Semelab Metal Gate RF Silicon FET Original PDF
    D1017UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W-28V-175MHz SINGLE ENDED Original PDF

    D1017UK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ferrite core ER25

    Abstract: idq06 ft-82 D1017UK ER-25 enamalled wire current
    Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz 19swg ferrite core ER25 idq06 ft-82 D1017UK ER-25 enamalled wire current PDF

    D1017K

    Abstract: D1017UK FT-82 6264
    Text: TetraFET D1017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1017UK 175MHz 19swg D1017K D1017UK FT-82 6264 PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1017UK.02 METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz 18swg 19swg PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz 19swg PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz PDF

    D1017UK

    Abstract: enamalled wire current 18SWG
    Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz 175MHz 18swg 19swg D1017UK enamalled wire current PDF

    d1017k

    Abstract: D1017UK ft-82 T210P
    Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz 19swg d1017k D1017UK ft-82 T210P PDF

    D1017UK

    Abstract: No abstract text available
    Text: TetraFET D1017UK.01 METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 150MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 150MHz PDF

    transistor k 975

    Abstract: D1017UK
    Text: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz transistor k 975 D1017UK PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    D1017UK 175MHz 19swg PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original
    CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    GNS430

    Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
    Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon


    Original
    GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK PDF

    Untitled

    Abstract: No abstract text available
    Text: IUI TetraFET =MMË SEM E D1017UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J DM PIN 1 SOURCE PIN 2 DRAIN PIN 3 SOURCE


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    D1017UK PDF