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    CHIP DIE TRANSISTOR Search Results

    CHIP DIE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CHIP DIE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils


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    NES4403C PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils


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    NES4401C PDF

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils


    Original
    NES4403C PDF

    chip die npn transistor

    Abstract: No abstract text available
    Text: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils


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    NES4401C chip die npn transistor PDF

    transistor B 1184

    Abstract: No abstract text available
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L


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    SIPC08P20 SIPC08P10 SIPC20AN05 SIPC20AN05L SIPC14AN05 SIPC14AN05L SIPC08AN05 SIPC08AN05L SIPC06AN05 SIPC06AN05L transistor B 1184 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:


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    ci2cJ237 SGSP358 PDF

    PVAPOX

    Abstract: No abstract text available
    Text: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate


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    BUZ11A 156x156 MC-0074 PVAPOX PDF

    C0073

    Abstract: f740
    Text: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:


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    180x220 C-0073 C0073 f740 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


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    BUZ32 156x156 15x19 PDF

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM


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    71TMHD IRF520 PDF

    5N10E

    Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183


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    5P05E 2P05E 5P06E 2P10E 2P20E 4P24E 2N05E 5N05E 5N06E 5N65E 5N10E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D PDF

    transistor IRF730

    Abstract: IRF730 TESTING
    Text: I SCS-THOMSON •[LIOTMIg IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x1 56 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A


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    IRF730 C-0072 transistor IRF730 IRF730 TESTING PDF

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:


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    180x220 20x16 IRF740 PDF

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON MD g[s] [ilLI(gre©iD(gi IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source


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    IRF730 156x156 PDF

    GS 669

    Abstract: MC008
    Text: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


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    SGSP358 77x77 15x15 17x19 MC-0080 SGS358 GS 669 MC008 PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u


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    IRF151 PDF

    sgsp301

    Abstract: No abstract text available
    Text: SGS-THOMSON ¡y SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: 52x53 mils • METALLIZATION: Al Top Back Au /C r /NI /Au • BACKSIDE THICKNESS: 6100 Â 16 ± 2 mils • DIE THICKNESS: P-Vapox • PASSIVATION: • BONDING PAD SIZE:


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    SGSP301 52x53 PDF

    IRF540

    Abstract: IRF540CHIP
    Text: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


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    IRF540 170x170 15x18 MC-0075 IRF540CHIP PDF

    transistor b 1185

    Abstract: transistor B 1184 SIPC36AN10 SIPC25AN20 SIPC36AN05
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 |im Die topology Page 0.018 SIPC36AN05 500 x 2 PH 1185 ^ D S m a x ) ^ D S |o n )m a x V Q 50 100 0.045 SIPC36AN10 500 PH 1185 200 0.120


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    SIPC36AN05 SIPC36AN10 SIPC25AN20 SIPC36AN20 SIPC25AN40 SIPC36AN40 SIPC36AN40F SIPC36N50F SIPC42AN50 SIPC25AN50 transistor b 1185 transistor B 1184 PDF

    Untitled

    Abstract: No abstract text available
    Text: [Z T SGS-THOMSON ^7#» IÄiM i[L[Hg7[M» gS IRF620 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source


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    110x110 IRF620 PDF

    BUZ21

    Abstract: c0074
    Text: SGS-THOMSON HUKêirMDÊi BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A


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    BUZ21 C-0074 c0074 PDF

    transistor C 639 W

    Abstract: No abstract text available
    Text: SGS-THOMSON •LieîWWÊ BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 17 0x1 70 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A 16 ± 2 mils


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    BUZ11 MC-007S transistor C 639 W PDF

    IRF540

    Abstract: IRF540CHIP
    Text: / T T SGS-THOMSON ^TÆ„ MfflimitgTTOMOgS IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 7 0 x 1 7 0 mils M ETALLIZATIO N: Top Back Al A u /C r /N i/A u BACKSIDE THICKNESS: DIE THIC KNESS: PASSIVATION: BONDING PAD SIZE:


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    IRF540 MC-0075 IRF540CHIP PDF

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON MTH40N06 CHIP Hö»lllLI giriS [iülO(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u


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    MTH40N06 PDF