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    Untitled

    Abstract: No abstract text available
    Text: rzrj SGS-THOMSON [» »[IILligretMOtgS SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 7 7 x 7 7 mils Al A u /C r/N i/A u


    OCR Scan     		PDF SGSP358

    GS 669

    Abstract: MC008
    Text: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


    OCR Scan     		PDF SGSP358 77x77 15x15 17x19 MC-0080 SGS358 GS 669 MC008

    Untitled

    Abstract: No abstract text available
    Text: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:


    OCR Scan     		PDF ci2cJ237 SGSP358