HD965
Abstract: 2SD965 transistor 2sd965
Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD965 HD965 █ 芯片简介 █ 芯片图 芯片尺寸：4 英寸（100mm） 芯片代码：C089AJ-00-XXX 芯片厚度：240±20µm 管芯尺寸：890x890µm 2 焊位尺寸：B 极 230×230µm；E 极 170×170µm
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2SD965
HD965
100mm
C089AJ-00-XXX
10AIC
HD965
2SD965
transistor 2sd965
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M/TNC-75
Abstract: No abstract text available
Text: Cobham Antenna Systems Microwave Antennas Specialist Antenna Design and Manufacture CATALOGUE 2012 The most important thing we build is trust DEFENCE SECURITY ANTENNAS ANTENNAS SATELLITE COMMUNICATION ANTENNAS COMMERCIAL ANTENNAS Cobham Antenna Systems Microwave Antennas - Newmarket
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Link16
M/TNC-75
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IRF540
Abstract: IRF540CHIP IRF540 application
Text: 30E D m 7 ^ 5 3 7 00303.35 S G S -T H O M S O N R • _ S G S-THOMSON IlL iM M » IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS:
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IRF540
170x170
47x51
15x18
IRF540CHIP
IRF540 application
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IRF540
Abstract: IRF540CHIP
Text: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
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IRF540
170x170
15x18
MC-0075
IRF540CHIP
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MOSFET Termination Structure
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands
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STVHD90.
STVHD90
MOSFET Termination Structure
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Untitled
Abstract: No abstract text available
Text: SSDI TRANSISTORS* - THE NPN TRANSISTORS CHIP TYPE INDUSTRY REFERENCE C AMPS hFE b v ceo (VOLTS) ^ 40-450 10-100(50mA,5V) IC’ VCE^ C6E 2N3738,9 0.5 C6T 2N5010-15 0.5 500-lK(CER) 30-180(25mA,10V) 2N5092,5,7 1.0 350-450 10-100(.2A,5V) SPT5502,3 1.0 70.0-800 (CER)
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2N3738
2N5010-15
500-lK
2N5092
SPT5502
SPT6502
2N4300
2N5152
2N4150
2N3996-9
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sgs mosfet
Abstract: buz11 application note FZJ 101
Text: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands
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STVHD90.
STVHD90
sgs mosfet
buz11 application note
FZJ 101
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